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參數(shù)資料
| 型號： | IDT70V18L20PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM |
| 中文描述： | 64K X 9 DUAL-PORT SRAM, 20 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 146K |
| 代理商： | IDT70V18L20PF |
15
IDT70V18L
High-Speed 3.3V 64K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Preliminary
+@
Busy Logic provides a hardware indication that both ports of the
RAMhave accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAMis
“
Busy
”
. The
BUSY
pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted fromthe side that receives a
BUSY
indication, the
write signal is gated internally to prevent the write fromproceeding.
The use of
BUSY
logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the
BUSY
outputs
together and use any
BUSY
indication as an interrupt source to flag the
event of an illegal or illogical operation. If the write inhibit function of
BUSY
logic is not desirable, the
BUSY
logic can be disabled by placing
the part in slave mode with the M/
S
pin. Once in slave mode the
BUSY
pin operates solely as a write inhibit input pin. Normal operation can be
programmed by tying the
BUSY
pins HIGH. If desired, unintended
write operations can be prevented to a port by tying the
BUSY
pin for
that port LOW.
The
BUSY
outputs on the IDT70V18 RAMin master mode, are
push-pull type outputs and do not require pull up resistors to operate.
If these RAMs are being expanded in depth, then the
BUSY
indication
for the resulting array requires the use of an external AND gate.
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a
BUSY
flag to be output fromthe master before the
actual write pulse can be initiated with the R/
W
signal. Failure to
observe this timng can result in a glitched internal write inhibit signal
and corrupted data in the slave.
*4
The IDT70V18 is an extremely fast Dual-Port 64K x 9 CMOS Static
RAMwith an additional 8 address locations dedicated to binary
semaphore flags. These flags allow either processor on the left or right
side of the Dual-Port RAMto claima privilege over the other processor
for functions defined by the systemdesigner
’
s software. As an ex-
ample, the semaphore can be used by one processor to inhibit the
other fromaccessing a portion of the Dual-Port RAMor any other
shared resource.
The Dual-Port RAMfeatures a fast access time, with both ports
being completely independent of each other. This means that the
activity on the left port in no way slows the access time of the right port.
Both ports are identical in function to standard CMOS Static RAMand
can be read fromor written to at the same time with the only possible
conflict arising fromthe simultaneous writing of, or a simultaneous
READ/WRITE of, a non-semaphore location. Semaphores are pro-
tected against such ambiguous situations and may be used by the
systemprogramto avoid any conflicts in the non-semaphore portion
of the Dual-Port RAM. These devices have an automatic power-down
feature controlled by
CE
, the Dual-Port RAMenable, and
SEM
, the
semaphore enable. The
CE
and
SEM
pins control on-chip power
down circuitry that permts the respective port to go into standby mode
when not selected. This is the condition which is shown in Truth Table
III where
CE
and
SEM
are both HIGH.
Systems which can best use the IDT70V18 contain multiple
processors or controllers and are typically very high-speed systems
which are software controlled or software intensive. These systems
can benefit froma performance increase offered by the IDT70V18s
hardware semaphores, which provide a lockout mechanismwithout
requiring complex programmng.
Software handshaking between processors offers the maximumin
systemflexibility by permtting shared resources to be allocated in
varying configurations. The IDT70V18 does not use its semaphore
flags to control any resources through hardware, thus allowing the
systemdesigner total flexibility in systemarchitecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred
in either processor. This can prove to be a major advantage in very
high-speed systems.
2=4*48
The semaphore logic is a set of eight latches which are indepen-
dent of the Dual-Port RAM. These latches can be used to pass a flag,
or token, fromone port to the other to indicate that a shared resource
is in use. The semaphores provide a hardware assist for a use
assignment method called
“
Token Passing Allocation.
”
In this method,
the state of a semaphore latch is used as a token indicating that a
shared resource is in use. If the left processor wants to use this
resource, it requests the token by setting the latch. This processor then
8'49&=4+@
%7*;+
When expanding an IDT70V18 RAMarray in width while using
BUSY
logic, one master part is used to decide which side of the RAMs
array will receive a
BUSY
indication, and to output that indication. Any
number of slaves to be addressed in the same address range as the
master use the
BUSY
signal as a write inhibit signal. Thus on the
IDT70V18 RAMthe
BUSY
pin is an output if the part is used as a
master (M/
S
pin = V
IH
), and the
BUSY
pin is an input if the part used
as a slave (M/
S
pin = V
IL
) as shown in Figure 3.
If two or more master parts were used when expanding in width, a
split decision could result with one master indicating
BUSY
on one side
of the array and another master indicating
BUSY
on one other side of
the array. This would inhibit the write operations fromone port for part
of a word and inhibit the write operations fromthe other port for the
other part of the word.
The
BUSY
arbitration on a master is based on the chip enable and
Figure 3. Busy and chip enable routing for both width and depth expansion
with IDT70V18 RAMs.
4854 drw 17
MASTER
Dual Port RAM
BUSY
R
CE
0
MASTER
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
CE
1
CE
1
CE
0
A
16
BUSY
L
BUSY
L
BUSY
L
BUSY
L
.
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| IDT70V18L20PF8 | 功能描述:IC SRAM 576KBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V18L20PFI | 功能描述:IC SRAM 576KBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V18L20PFI8 | 功能描述:IC SRAM 576KBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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