參數(shù)資料
型號: IDT70T653MS12BCI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE
中文描述: 512K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
封裝: BGA-256
文件頁數(shù): 16/24頁
文件大?。?/td> 309K
代理商: IDT70T653MS12BCI
IDT70T653M Preliminary
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
16
Timing Waveform of Write with
BUSY
NOTES:
1. t
WH
must be met for
BUSY
input.
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
5679 drw 15
R/
W
"A"
BUSY
"B"
t
WB
R/
W
"B"
t
WH
(1)
(2)
t
WP
.
5679 drw 14a
t
DW
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
MATCH
R/
W
"B"
VALID
t
DDD
(3)
t
WDD
.
(4)
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(1,2)
70T653MS10
Com'l Only
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
t
AS
Address Set-up Time
0
____
0
____
0
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
ns
t
INS
Interrupt Set Time
____
10
____
12
____
15
ns
t
INR
Interrupt Reset Time
____
10
____
12
____
15
ns
5679 tbl 16
NOTES:
1. Timing is the same for both ports.
2. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
Timing Waveform of Write with Port-to-Port Read
(1,3)
NOTES:
1.
CE
0L
=
CE
0R
= V
IL
; CE
1L
= CE
1R
= V
IH
.
2.
OE
= V
IL
for the reading port.
3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
4. R/
W
B
= V
IH
.
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