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參數(shù)資料
| 型號： | IDT70T653MS12BCI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE |
| 中文描述： | 512K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 309K |
| 代理商： | IDT70T653MS12BCI |
IDT70T653M Preliminary
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
RapidWrite Mode Write Cycle
12
Unlike other vendors' Asynchronous Random Access Memories,
the IDT70T653M is capable of performing multiple back-to-back write
operations without having to pulse the R/
W
,
CE
, or
BE
n signals high
during address transitions. This RapidWrite Mode functionality allows the
system designer to achieve optimum back-to-back write cycle performance
without the difficult task of generating narrow reset pulses every cycle,
simplifying system design and reducing time to market.
During this new RapidWrite Mode, the end of the write cycle is now
defined by the ending address transition, nstead of the R/
W
or
CE
or
BE
n
transition to the inactive state. R/
W
,
CE
, and
BE
n can be held active
throughout the address transition between write cycles. Care must be
taken to still meet the Write Cycle time (t
WC
), the time in which the Address
inputs must be stable. Input data setup and hold times (t
DW
and t
DH
) will
now be referenced to the ending address transition. In this RapidWrite
Mode the I/O will remain n the Input mode for the duration of the operations
due to R/
W
being held low. All standard Write Cycle specifications must
be adhered to. However, t
AS
and t
WR
are only applicable when switching
between read and write operations. Also, there are two additional
conditions on the Address Inputs that must also be met to ensure correct
address controlled writes. These specifications, the Allowable Address
Skew (t
AAS
) and the Address Rise/Fall time (t
ARF
), must be met to use the
RapidWrite Mode. If these conditions are not met there is the potential for
inadvertent write operations at random intermediate locations as the
device transitions between the desired write addresses.
5679 drw 08
t
WC
t
WC
t
WC
t
EW
t
WP
t
WZ
t
DH
t
DW
t
DW
t
DW
t
OW
t
WR
ADDRESS
CE
or
SEM
(6)
BE
n
R/
W
DATA
IN
DATA
OUT
(2)
(5)
(5)
t
DH
t
DH
(4)
Timing Waveform of Write Cycle No. 3, RapidWrite Mode Write Cycle
(1,3)
NOTES:
1.
OE
= V
IL
for this timing waveform as shown.
OE
may equal V
IH
with same write functionality; I/O would then always be in High-Z state.
2. A write occurs during the overlap (t
EW
or t
WP
) of a
CE
= V
IL,
BE
n = V
IL
,
and a R/
W
= V
IL
for memory array writing cycle. The last transition LOW of
CE
,
BE
n, and
R/
W
initiates the write sequence. The first transition HIGH of
CE
,
BE
n, and R/
W
terminates the write sequence.
3. If the
CE
or
SEM
= V
IL
transition occurs simultaneously with or after the R/
W
= V
IL
transition, the outputs remain in the High-impedance state.
4. The timing represented in this cycle can be repeated multiple times to execute sequential RapidWrite Mode writes.
5. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 1).
6. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. t
EW
must be met for either condition.
CE
= V
IL
when
CE
0
= V
IL
and CE
1
= V
IH
.
CE
= V
IH
when
CE
0
= V
IH
and/or CE
1
= V
IL
.
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| IDT70T653MS12BCI8 | 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T653MS15BC | 功能描述:IC SRAM 18MBIT 15NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T653MS15BC8 | 功能描述:IC SRAM 18MBIT 15NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T659S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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