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參數(shù)資料
| 型號： | IDT70T653MS12BCI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE |
| 中文描述： | 512K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 |
| 封裝： | BGA-256 |
| 文件頁數(shù)： | 15/24頁 |
| 文件大?。?/td> | 309K |
| 代理商： | IDT70T653MS12BCI |
15
IDT70T653M Preliminary
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to Timing Waveform of Write with Port-to-Port Read.
2. To ensure that the earlier of the two ports wins.
3. t
BDD
is a calculated parameter and is the greater of the Max. spec, t
WDD
– t
WP
(actual), or t
DDD
– t
DW
(actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
Symbol
Parameter
70T653MS10
Com'l Only
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
BUSY
TIMING
t
WB
BUSY
Input to Write
(4)
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(5)
7
____
9
____
12
____
ns
PORT-TO-PORT DELAY TIMING
t
WDD
Write Pulse to Data Delay
(1)
____
14
____
16
____
20
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
14
____
16
____
20
ns
5679 tbl 15
Symbol
Parameter
70T65M3S10
Com'l Only
70T653MS12
Com'l
& Ind
70T6539MS15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
SLEEP MODE TIMING (ZZx=V
IH
)
t
ZZS
Sleep Mode Set Time
10
____
12
____
15
____
t
ZZR
Sleep Mode Reset Time
10
____
12
____
15
____
t
ZZPD
Sleep Mode Power Down Time
(4)
10
____
12
____
15
____
t
ZZPU
Sleep Mode Power Up Time
(4)
____
0
____
0
____
0
5679 tbl 15a
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(1,2,3)
NOTES:
1. Timing is the same for both ports.
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INT
x and the sleep mode pins themselves (ZZx) are not affected
during sleep mode. It is recommended that boundary scan not be operated during sleep mode.
3. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
4. This parameter is guaranteed by device characterization, but is not production tested.
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| IDT70T653MS12BCI8 | 功能描述:IC SRAM 18MBIT 12NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T653MS15BC | 功能描述:IC SRAM 18MBIT 15NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T653MS15BC8 | 功能描述:IC SRAM 18MBIT 15NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T659S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70T659S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
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