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參數(shù)資料
| 型號： | IDT70121L55JG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| 中文描述： | 2K X 9 DUAL-PORT SRAM, 55 ns, PQCC52 |
| 封裝： | 0.75 X 0.75 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 139K |
| 代理商： | IDT70121L55JG |
3
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
APRIL 05, 2006
Maximum Operating Temperature
and Supply Voltage
(1)
Recommended DC
Operating Conditions
Capac itanc e
(T
A
= +25°C, f = 1.0MHz)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliabilty.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum and is limted to < 20mA for the period of V
TERM
> V
cc
+ 10%.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTE:
1. This parameter is determned by device characterization but is not production
tested.
DC Elec tric al Charac teristic s Over the Operating
Temperature and S upply Voltage Range
(V
CC
= 5.0V ± 10%)
NOTE:
1. At Vcc < 2.0V leakages are undefined.
Symbol
Rating
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
with Respect
to GND
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output
Current
50
mA
2654 tbl 01
Grade
Ambient
Temperature
GND
Vcc
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
2654 tbl 02
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(2)
V
V
IL
Input LowVoltage
-0.5
(1)
____
0.8
V
2654 tbl 03
Symbol
Parameter
Conditions
(1)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
10
pF
2654 tbl 04
Symbol
Parameter
Test Conditions
70121S
70125S
70121L
70125L
Unit
Min.
Max.
Min.
Max.
|
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
5
μA
|
LO
|
Output Leakage Current
V
CC
= 5.5V,
CE
= V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
μA
V
OL
Output LowVoltage
I
OL
= +4mA
___
0.4
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
2654 tbl 05
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| IDT70121L55JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
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| IDT70121L70L52B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70121S | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
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