參數(shù)資料
型號： IDT70121L45JG
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
中文描述： 2K X 9 DUAL-PORT SRAM, 45 ns, PQCC52
封裝： 0.75 X 0.75 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-52
文件頁數(shù)： 4/15頁
文件大?。?/td> 139K
代理商： IDT70121L45JG
6.42
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt Industrial and Commercial Temperature Ranges
DC Elec tric al Charac teristic s Over the Operating
Temperature and S upply Voltage Range
(1,4)
(V
CC
= 5V ± 10%)
APRIL 05, 2006
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximumfrequency read cycle of 1/t
RC
, and using “AC TEST CONDITIONS” of
input levels of GND to 3V.
3. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
4. Vcc=5V, T
A
=+25°C for Typ, and is not production tested.
5. Port "A" may be either left or right port. Port "B" is opposite fromport "A".
70121X25
70125X25
Com'l Only
70121X35
70125X35
Coml
& Ind
Symbol
Parameter
Test Condition
Version
Typ.
Max.
Typ.
Max.
Unit
I
CC
Dynamc Operating Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
f = f
MAX
(2)
COML
S
L
135
135
260
220
135
135
250
210
mA
IND
S
L
___
___
___
___
135
135
275
250
I
SB1
Standby Current
(Both Ports - TTL Level Inputs)
CE
"A"
=
CE
"B"
= V
IH
f = f
MAX
(2)
COML
S
L
30
30
65
45
30
30
65
45
mA
IND
S
L
___
___
___
___
30
30
80
65
I
SB2
Standby Current
(One Port - TTL Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(2)
COML
S
L
80
80
175
145
80
80
165
135
mA
IND
S
L
___
___
___
___
80
80
190
165
I
SB3
Full Standby Current (Both Ports
- CMOS Level Inputs)
CE
"A"
and
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
VIN < 0.2V, f = 0
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
5
mA
IND
S
L
___
___
___
___
1.0
0.2
15
5
I
SB4
Full Standby Current
(One Port - CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled,
f = f
MAX
(2)
COML
S
L
70
70
170
140
70
70
160
130
mA
IND
S
L
___
___
___
___
70
70
185
160
2654 tbl 06a
70121X45
70125X45
Com'l Only
70121X55
70125X55
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
Max.
Typ.
Max.
Unit
I
CC
Dynamc Operating Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
f = f
MAX
(2)
COML
S
L
135
135
245
205
135
135
240
200
mA
IND
S
L
___
___
___
___
___
___
___
___
I
SB1
Standby Current
(Both Ports - TTL Level Inputs)
CE
"A"
=
CE
"B"
= V
IH
f = f
MAX
(2)
COML
S
L
30
30
65
45
30
30
65
45
mA
IND
S
L
___
___
___
___
___
___
___
___
I
SB2
Standby Current
(One Port - TTL Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(2)
COML
S
L
80
80
160
130
80
80
155
125
mA
IND
S
L
___
___
___
___
___
___
___
___
I
SB3
Full Standby Current
(Both Ports - CMOS Level
Inputs)
CE
"A"
and
CE
"B"
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(3)
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
5
mA
IND
S
L
___
___
___
___
___
___
___
___
I
SB4
Full Standby Current
(One Port - CMOS Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
CC
- 0.2V
(5)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
Active Port Outputs Disabled,
f = f
MAX
COML
S
L
70
70
155
125
70
70
150
120
mA
IND
S
L
___
___
___
___
___
___
___
___
2654 tbl 06b
相關PDF資料
PDF描述
IDT70121L45JGI HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L55JG HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L55JGI HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121S25JG HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
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相關代理商/技術參數(shù)
參數(shù)描述
IDT70121L45JGI 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L45L52 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM
IDT70121L45L52B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM
IDT70121L55J 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
IDT70121L55J8 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應商設備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
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