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參數(shù)資料
| 型號(hào)： | IDT70121L45JG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| 中文描述： | 2K X 9 DUAL-PORT SRAM, 45 ns, PQCC52 |
| 封裝： | 0.75 X 0.75 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 139K |
| 代理商： | IDT70121L45JG |
6.42
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt Industrial and Commercial Temperature Ranges
Timing Waveform of
BUSY
Arbritration Controlled by Address
(1)
t
RC
OR t
WC
APRIL 05, 2006
AC Elec tric al Charac teristic s Over the
Operating Temperature and S upply Voltage Range
(1)
NOTES
:
1. 'X' in part numbers indicates power rating (S or L).
t
BAA
ADDR
'A'
BUSY
'B'
ADDRESSES MATCH
ADDRESSES DO NOT MATCH
t
APS
(2)
t
BDA
ADDR
'B'
2654 drw 12
70121X25
70125X25
Com'l Only
70121X35
70125X35
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Mn.
Max.
Unit
INTERRUPT TIMING
t
AS
Address Set-up Time
0
____
0
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
INS
Interrupt Set Time
____
25
____
35
ns
t
INR
Interrupt Reset Time
____
25
____
35
ns
2654 tbl 12a
70121X45
70125X45
Com'l Only
70121X55
70125X55
Com'l Only
Symbol
Parameter
Min.
Max.
Mn.
Max.
Unit
INTERRUPT TIMING
t
AS
Address Set-up Time
0
____
0
____
ns
t
WR
Write Recovery Time
0
____
0
____
ns
t
INS
Interrupt Set Time
____
40
____
45
ns
t
INR
Interrupt Reset Time
____
40
____
45
ns
2654 tbl 12b
NOTES:
1. All timng is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite fromport “A”.
2. If
t
APS
is not satisified, the
BUSY
will be asserted on one side or the other, but there is no guarantee on which side
BUSY
will be asserted
(70121 only).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70121L45JGI | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L55JG | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L55JGI | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S25JG | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S25JGI | Replacement for Harris part number ICL7660SMTV/883B. Buy from authorized manufacturer Rochester Electronics. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70121L45JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L45L52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70121L45L52B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70121L55J | 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT70121L55J8 | 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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