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參數(shù)資料
| 型號(hào)： | IDT7009L20PFI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | USBF TV Field Memory Key 2048MB RAM Nickel RoHS Compliant: Yes |
| 中文描述： | 128K X 8 DUAL-PORT SRAM, 20 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大?。?/td> | 143K |
| 代理商： | IDT7009L20PFI |
6.42
IDT7009L
High-Speed 128K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
85.<5.
$23/4
#
4
%')4=>#
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Chip Enable Truth Table.
Symbol
Parameter
Test Conditions
7009L
Unit
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
5
μA
|
LO
|
Output Leakage Current
CE
= V
IH
, V
OUT
= 0V to V
CC
___
5
μA
V
OL
Output Low Voltage
I
OL
= 4mA
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
V
4839 tbl 09
NOTES:
1. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA (Typ.)
2. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximumfrequency read cycle of 1/ t
RC,
and using
“
AC Test Conditions
”
of input
levels of GND to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite fromport "A".
5. Refer to Chip Enable Truth Table.
6. Industrial Temperature: for specific speeds, packages and powers contact your sales office.
85.<5.
$23/4
!!@#
4
%')4=>#
Symbol
Parameter
Test Condition
Version
7009L15
Com'l Only
Typ.
(1)
Max
7009L20
Com'l Only
Typ.
(1)
Max
Unit
I
CC
Dynamc Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(2)
COML
L
220
340
200
300
mA
IND
L
____
____
____
____
I
SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(2)
COML
L
65
100
50
75
mA
IND
L
____
____
____
____
I
SB2
Standby Current
(One Port - TTL Level
Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(4)
Active Port Outputs Disabled,
f=f
MAX
(2)
,
SEM
R
=
SEM
L
= V
IH
COML
L
145
225
130
195
mA
IND
L
____
____
____
____
I
SB3
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V, V
IN
> V
CC
- 0.2V
or V
IN
< 0.2V, f = 0
(3)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COML
L
0.2
3.0
0.2
3.0
mA
IND
L
____
____
____
____
I
SB4
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
- 0.2V
(4)
,
SEM
R
=
SEM
L
> V
CC
- 0.2V,
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V,
Active Port Outputs Disabled, f = f
MAX
(2)
COML
L
135
220
120
190
mA
IND
L
____
____
____
____
4839 tbl 10
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| IDT7009L20PFI8 | 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70101L25J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70101L25L52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70101L35J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70101L35L52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
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