參數(shù)資料
型號(hào)： IDT7005L55PFB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
中文描述： 8K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁(yè)數(shù)： 16/20頁(yè)
文件大?。?/td> 189K
代理商： IDT7005L55PFB
6.42
IDT7005S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the 0perating
Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
Data Retention Waveform
Data Retention Characteristics Over All Temperature Ranges
(L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. TA = +25°C, VCC = 2V, and are not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed by characterization, but is not production tested.
DATA RETENTION MODE
VCC
CE
2738 drw 05
4.5V
tCDR
tR
VIH
VDR
VIH
4.5V
VDR
2V
>
Symbol
Parameter
Test Conditions
7005S
7005L
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5A
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
___
10
___
5A
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2738 tbl 08
Symbol
Parameter
Test Condition
Min.
Typ.
(1)
Max.
Unit
VDR
VCC for Data Retention
VCC = 2V
2.0
___
V
ICCDR
Data Retention Current
CE > VHC
VIN > VHC or < VLC
Mil. & Ind.
___
100
4000
A
Com'l.
___
100
1500
tCDR
(3)
Chip Deselect to Data Retention Time
SEM > VHC
0
___
ns
tR(3)
Operation Recovery Time
tRC(2)
___
ns
2738 tbl 09
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7005L55XL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7005L55XLB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7005L70F 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005L70FB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005L70G 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
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