參數(shù)資料
型號: ICS841S012DKILFT
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 9/23頁
文件大?。?/td> 0K
描述: IC FREQ SYNTHESIZER 56VFQFN
標準包裝: 1,000
系列: HiPerClockS™, PCI Express® (PCIe)
類型: 時鐘/頻率合成器,多路復用器
PLL:
主要目的: PCI Express(PCIe)
輸入: LVCMOS,LVTTL,晶體
輸出: HCSL,LVCMOS,LVTTL
電路數(shù): 1
比率 - 輸入:輸出: 2:12
差分 - 輸入:輸出: 是/無
頻率 - 最大: 250MHz
電源電壓: 3.135 V ~ 3.465 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 56-VFQFN 裸露焊盤
供應商設備封裝: 56-VFQFP-EP(8x8)
包裝: 帶卷 (TR)
ICS841S012BKI REVISION A NOVEMBER 10, 2009
17
2009 Integrated Device Technology, Inc.
ICS841S012I Data Sheet
CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/LVCMOS FREQUENCY SYNTHESIZER
TABLE 7. THERMAL RESISTANCE
θθθθθ
JA FOR 56 LEAD VFQFN, FORCED CONVECTION
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability
of the device. The maximum recommended junction temperature for HiPerClockSTM devices is 125°C.
The equation for Tj is as follows: Tj =
θ
JA * Pd_total + TA
Tj = Junction Temperature
θ
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
T
A = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
θ
JA must be used.
Assuming 1 meter per second air flow and a multi-layer board, the appropriate value is 31.4°C/W per Table 7.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 1.159W * 31.4°C/W = 121.4°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air
flow, and the type of board (multi-layer).
θθθθθ
JA by Velocity (Meters per second)
0
1
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
31.4°C/W
27.5°C/W
24.6°C/W
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ICS841S012I 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:Crystal-to-0.7V Differential HCSL/LVCMOS Frequency Synthesizer
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