參數(shù)資料
型號： IC42S81600-8T(G)
英文描述： 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 4（2）M中的x 8（16）位× 4銀行（128 - Mbit的）同步動態(tài)RAM
文件頁數(shù)： 13/69頁
文件大小： 1118K
代理商： IC42S81600-8T(G)
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
20
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
Precharge
The precharge command can be asserted anytime after tRAS(min.) is satisfied.
Soon after the precharge command is asserted, the precharge operation is performed and the synchronous DRAM enters
the idle state after tRP(min.) is satisfied. The parameter tRP is the time required to perform the precharge.
The earliest timing in a read cycle that a precharge command can be asserted without losing any data in the burst is as
follows.
P
rechargeE
Burst lengh=4
CLK
Command
CAS
latency = 2
DQ
Command
CAS
latency = 3
DQ
(tRAS is satisfied)
Hi - Z
Q0
Q3
Q2
Q1
PRE
Q0
Q3
Q2
Q1
Read
T0
T1
T2
T3
T4
T5
T6
T7
PRE
Hi - Z
In order to write all data to the memory cell correctly, the asynchronous parameter tDPL must be satisfied. The tDPL(min.)
specification defines the earliest time that a precharge command can be asserted. The minimum number of clocks can be
calculated by dividing tDPL(min.) with the clock cycle time.
In summary, the precharge command can be asserted relative to the reference clock that indicates the last data word is
valid. In the following table, minus means clocks before the reference; plus means time after the reference.
CAS
CAS latency
Read
Write
2-1
+ tDPL((min.)
3-2
+ tDPL((min.)
相關(guān)PDF資料
PDF描述
IC42S81600-8TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S81600-8TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TI(G) 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600-8TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-6T 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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