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參數(shù)資料
| 型號(hào)： | IBM13V25649AN |
| 廠商： | IBM Microeletronics |
| 英文描述： | 256K x 64 SGRAM SO DIMM（Small Outline Dual In-line Memory Modules）(256K x 64 144腳小外形雙列直插同步圖形RAM模塊) |
| 中文描述： | 256K × 64 SGRAM蘇內(nèi)存（小外形雙列直插式內(nèi)存模塊）（256K × 64 144腳小外形雙列直插同步圖形內(nèi)存模塊） |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 224K |
| 代理商： | IBM13V25649AN |
IBM13V25649AN IBM13V51649AN
256K/512K x 64 SGRAM SO DIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 14
88H4121.E24358
Revised 1/98
I
CC
Specifications
(0
°
C
≤
T
A
≤
70
°
C; V
CC
/V
CCQ
= 3.3V 0.3V)
Symbol
Parameter
Test Condition
CAS
Latency
Maximum
Maximum
Unit
Notes
256Kx64
512Kx64
-7R5
-10
-7R5
-10
I
CC1
Operating Current
Burst Length = 1
tRC
≥
tRC(Min)
t
CK
≥
t
CK
(Min)
I
O= 0mA
3
450
370
550
470
mA
1, 5
2
420
350
520
450
I
CC2
P
Precharge Standby Current
in Power Down Mode
CKE
≤
VIL(Max) t
CK
=15ns
6
6
12
12
mA
1, 5
I
CC2
PS
CKE
≤
VIL(Max) t
CK
= Infinity
6
6
12
12
I
CC2
N
Precharge Standby Current
in Non Power Down Mode
CKE
≥
VIH(Min) t
CK
=15ns
Input change every 30ns
90
90
190
190
mA
6
I
CC2
NS
CKE
≥
VIH(Min) t
CK
=Infinity
No input change
40
40
90
90
7
I
CC3
P
Active Standby Current in
Power Down Mode
CKE
≤
VIL(Max) t
CK
=15ns
6
6
12
12
mA
I
CC3
PS
CKE
≤
VIL(Max) t
CK
= Infinity
6
6
12
12
I
CC3
N
Active Standby Current in
Non Power Down Mode
CKE
≥
VIH(Min) t
CK
=15ns
Input change every 30ns
100
100
200
200
mA
I
CC3
NS
CKE
≥
VIH(Min) t
CK
=Infinity
No input change
50
50
100
100
I
CC4
Operating Current
(Burst Mode)
tRC =Infinity
I
O= 0mA
Dual Bank Interleave
Continuous
3
400
380
500
480
mA
2, 8
2
300
280
400
380
I
CC5
Auto Refresh Current
tRC
≥
tRC(Min)
3
420
370
840
740
mA
3, 4
2
340
310
680
610
I
CC6
Self Refresh Current
CKE = 0.2V
6
6
12
12
mA
4, 9
1. Measured with outputs open, inputs 0-3V.
2. Assumes minimum column address update cycle.
3. Refresh period is 16ms.
4. Assumes all SGRAMs in Self-refresh.
5. One bank operating; if 512Kx64, one bank in active standby, non-power down mode.
6. One bank precharge; if 512Kx64, one bank in active standby, non-power down mode.
7. One bank precharge; if 512Kx64, one bank in active standby, no input change.
8. One bank in burst; if 512Kx64, one bank in active standby.
9. Refresh period is 128ms.
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