參數(shù)資料
型號： IBM13M32734BCD
廠商： IBM Microeletronics
英文描述： 32M x 72 2-Bank Registered/Buffered SDRAM Module(32M x 72 2組寄存/緩沖同步動態(tài)RAM模塊)
中文描述： 32M × 72配置2，銀行注冊/緩沖內(nèi)存模組（32M × 72配置2組寄存/緩沖同步動態(tài)內(nèi)存模塊）
文件頁數(shù)： 12/20頁
文件大?。?/td> 579K
代理商： IBM13M32734BCD
IBM13M32734BCD
32M x 72 2-Bank Registered/Buffered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 12 of 20
19L7143.E93758B
2/99
Operating, Standby, and Refresh Currents
(T
A
= 0 to +70
°
C, V
DD
= 3.3V
±
0.3V)
Parameter
Symbol
Test Condition
Speed
Units
Notes
-260
-360
-10 (Note 1)
Burst Operating Mode/Active
Standby
I
CC4
/I
CC3N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3300
3300
2460
mA
2, 3, 4
Burst Operating Mode/Precharge
Standby
I
CC4
/I
CC2N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3210
3210
2370
mA
2, 3, 4
Burst Operating Mode/Auto
Refresh
I
CC4
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5190
5190
3900
mA
2, 3, 4
Non-burst Operating Mode/Active
Standby
I
CC1
/I
CC3N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
2490
2490
1830
mA
2, 3, 4
Non-burst Operating Mode/Pre-
charge Standby
I
CC1
/I
CC2N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1790
1790
1312
mA
2, 3, 4
Non-burst Operating Mode/Auto
Refresh
I
CC1
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
4380
4380
3270
mA
2, 4
Active Standby/Active Standby
I
CC3N
/I
CC3N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1860
1860
1380
mA
4
Active Standby/Precharge
Standby
I
CC3N
/I
CC2N
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1770
1770
1294
mA
4
Active Standby/Auto Refresh
I
CC3
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3750
3750
2820
mA
2, 4
Precharge Standby/Precharge
Standby
I
CC2
/I
CC2
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
1710
1710
1200
mA
4
Precharge Standby/Auto Refresh
I
CC2
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
3690
3690
2730
mA
2, 4
Auto Refresh/Auto Refresh
I
CC5
/I
CC5
CKE
≥
V
IH
(min), t
CK
= min,
S0 - S3 =V
IH
(min)
5640
5640
4260
mA
2, 4
Active Standby Power
Down/Active Standby Power
Down
I
CC3p
/I
CC3p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
670
670
560
mA
4
Active Standby Power Down/Pre-
charge Standby Power Down
I
CC3p
/I
CC2p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
560
560
450
mA
4
Precharge Standby Power
Down/Precharge Standby Power
Down
I
CC2p
/I
CC2p
CKE
≤
V
IL
(max), t
CK
= min,
S0 - S3 =V
IH
(min)
455
455
340
mA
4
Precharge Standby Non-power
Down/Precharge Standby Non-
power Down (NO CLOCK)
I
CC2S
/I
CC2S
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
215
215
215
mA
4
Precharge Standby Power
Down/Precharge Standby Power
Down (NO CLOCK)
I
CC2PS
/I
CC2P
S
CKE
≥
V
IH
(min), t
CK
= Infinity,
S0 - S3 =V
IH
(min)
71
71
71
mA
4
1. All -10 currents are calculated assuming t
CK
= 15ns (f
CK
= 66MHz).
2. These parameters depend on the cycle rate and are measured with the cycle determined by the minimum value of t
CK
and t
RC
.
Input signals are changed once during t
CK
(min). t
CK
(min) = 10ns for -260, -360; = 15ns for -10.
3. The specified values are obtained with the output open.
4. These parameters and symbols refer to a combination of physical bank 0/physical bank 1.
Discontinued (8/99 - last order; 12/99 - last ship)
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