
19L7144.E93758B
2/99
IBM13M16734BCC
16M x 72 1 Bank Registered/Buffered SDRAM Module
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 20
Features
168-Pin Registered 8-Byte Dual In-Line Memory
Module
16Mx72 Synchronous DRAM DIMM
Performance:
Intended for 66/100MHz and PC100 applications
Inputs and outputs are LVTTL (3.3V) compatible
Single 3.3V
±
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have four internal banks
Module has one physical bank
Fully Synchronous to positive Clock Edge
Programmable Operation:
- DIMM CAS Latency:3, 4 (Registered mode),
2, 3 (Buffered mode)
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-Page
supports Sequential burst only)
- Operation: Burst Read and Write
or Multiple Burst Read with Single Write
Data Mask for Byte Read/Write control
Auto Refresh (CBR) and Self Refresh
Automatic and controlled Precharge Commands
Suspend Mode and Power Down Mode
12/10/2 Addressing (Row/Column/Bank)
4096 refresh cycles distributed across 64ms
Card size: 5.25" x 0.157" x 1.70"
Gold contacts
SDRAM
S
in TSOP - Type II Package
Serial Presence Detect with Write protect feature
Description
IBM13M16734BCC is a registered 168-Pin Synchro-
nous DRAM Dual In-Line Memory Module (DIMM)
organized as a 16Mx72 high-speed memory array.
The DIMM uses eighteen 16Mx4 SDRAMs in 400 mil
TSOP packages. The DIMM achieves high-speed
data-transfer rates of up to 100 MHz by employing a
prefetch/pipeline hybrid architecture that synchro-
nizes the output data to a system clock.
The DIMM is intended for use in applications operat-
ing from 66MHz to 100 MHz, PC100, memory bus
speeds, and/or heavily loaded bus applications. All
control and address signals are re-driven through
registers/buffers to the SDRAM devices. The DIMM
can be operated in either registered mode (REGE
pin tied high), where the control/address input sig-
nals are latched in the register on one rising clock
edge and sent to the SDRAM devices on the follow-
ing rising clock edge (data access is delayed by one
clock), or in buffered mode (REGE pin tied low)
where the input signals pass through the regis-
ter/buffer to the SDRAM devices on the same clock.
XTK simulation models of the DIMM are available to
determine which mode to design for.
A phase-lock loop (PLL) on the DIMM is used to re-
drive the clock signals to both the SDRAM devices
and the registers to minimize system clock loading.
(CK0 is connected to the PLL, and CK1, CK2, and
CK3 are terminated on the DIMM.) A single clock
enable (CKE0) controls all devices on the DIMM,
enabling the use of SDRAM power-down modes.
Prior to any access operation, the device CAS
latency and burst type/length/operation type must be
programmed into the DIMM by address inputs A0-A9
using the mode register set cycle. The DIMM CAS
latency when operated in buffered mode is the same
as the device CAS latency as specified in the SPD
EEPROM. The DIMM CAS latency when operated in
registered mode is one clock later due to the address
and control signals being clocked to the SDRAM
devices.
The DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two-pin IIC
protocol. The first 128 bytes of serial PD data are
programmed and locked by the DIMM manufacturer.
The last 128 bytes are available to the customer and
may be write protected by providing a high level to
pin 81 on the DIMM. An on-board pulldown resistor
keeps this in the write-enable mode.
All IBM 168-pin DIMMs provide a high-performance,
flexible 8-byte interface in a 5.25" long space-saving
footprint.
-10
-260, -360
(PC100)
Units
Reg. Buff. Reg.
3
2
66
66
15
15
9.7
9.7
Buff.
2
100
10
7.7
DIMM CAS Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
t
AC
Clock Access Time
3
100
10
7.7
MHz
ns
ns
IBM11M4730C4M x 72 E12/10, 5.0V, Au.
Discontinued (8/99 - last order; 12/99 - last ship)