參數(shù)資料
型號(hào): IBM11S4325HP
廠商: IBM Microeletronics
英文描述: 4M x 32 SO DIMM Module(Small Outline Dual In-Line Memory Module)(4M x 32小外形雙列直插動(dòng)態(tài)RAM模塊)
中文描述: 4米× 32二氧化硫內(nèi)存模塊(小外形雙列內(nèi)存模組)(4米× 32小外形雙列直插動(dòng)態(tài)內(nèi)存模塊)
文件頁(yè)數(shù): 1/22頁(yè)
文件大?。?/td> 627K
代理商: IBM11S4325HP
IBM11S2325HP IBM11S4325HP
2M/4M x 32 SO DIMM Module
75H1718
SA14-4471-02
Revised 6/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 22
Features
72-Pin Small Outline Dual-In-Line
Memory Module
Performance:
High Performance CMOS process
Single 3.3
±
0.3V Power Supply
Low active current consumption
All inputs & outputs are LVTTL(3.3V) compatible
Extended Data Out (EDO) access cycle
Refresh Modes: RAS-Only, CBR, Hidden and
Self Refresh
2048 refresh cycles distributed across 128ms
11/10 Addressing (Row/Column)
Optimized for use in byte-write non-parity appli-
cations.
Au contacts
Description
The IBM11S4325HP is a 16MB industry standard
72-pin 4-byte small outline dual in-line memory mod-
ule (SO DIMM). The module is organized as 4Mx32
dual bank high speed memory array that is intended
for use in 16, 32 and 64 bit applications. It is manu-
factured with eight 2Mx8 TSOP devices, each in a
400mil package. The IBM11S2325HP is an 8MB
half populated version, manufactured with four
2Mx8 TSOP devices and is organized as a single
bank 1Mx32 high speed memory array.
The use of EDO DRAMs allows for a reduction in
cycle time from 40ns (Fast Page) to 25ns (EDO,
60ns sort). The use of TSOP packages allows for
tight DIMM spacing (.3” on center). Input loading is
consistent with 4Mb-based assemblies due to the
addition of discrete capacitors maximizing compati-
bility at the system level.
These assemblies are intended for use in space
constrained and/or low power applications.
The IBM 72-Pin SO DIMMs provide a high perfor-
mance, flexible 4-byte interface in a 2.35” long foot-
print.
-60
t
RAC
RAS Access Time
60ns
t
CAC
CAS Access Time
15ns
t
AA
Access Time From Address
30ns
t
RC
Cycle Time
104ns
t
HPC
EDO Mode Cycle Time
25ns
Card Outline
(Front) 1
(Back) 2
71
72
IBM11S2320NL2M x 3212/8, 5.0V, Au. IBM11S2320NN2M x 3212/8, 3.3V, Au.
Discontinued (9/98 - last order; 3/99 last ship)
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