參數(shù)資料
型號: IBM11T1645NP
廠商: IBM Microeletronics
英文描述: 1M x 64 144 PIN SO DIMM(1M x 64 144腳小外形雙列直插動態(tài)RAM模塊)
中文描述: 100萬× 64引腳SO DIMM內(nèi)存144(100萬× 64 144腳小外形雙列直插動態(tài)內(nèi)存模塊)
文件頁數(shù): 1/32頁
文件大小: 592K
代理商: IBM11T1645NP
IBM11T1645NP
IBM11T2645NP
1M/2M x 64 144 PIN SO DIMM
75H5937
GA14-4478-01
Revised 4/97
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 32
Features
144 Pin JEDEC Standard, 8 Byte Small Outline
Dual In-line Memory Module with 8 Byte busses
1M/2Mx64 Extended Data Out SO DIMM
Performance:
All inputs and outputs are LVTTL (3.3V) compat-
ible
Single 3.3V
±
0.3V Power Supply
Au contacts
Optimized for byte-write non-parity applications
System Performance Benefits:
- Reduced noise (18 V
SS
/18V
CC
pins)
- Byte write, byte read accesses
- Serial PDs
Extended Data Out (EDO) Mode, Read-Modify-
Write Cycles
Refresh Modes: RAS-Only, CBR Hidden
Refresh, and Self Refresh
4096 refresh cycles distributed across 256ms
12/8 addressing (Row/Column)
Card size: 2.66" x 1.0" x 0.149"
DRAMS in TSOP Package
Description
IBM11T2645NP is an industry standard 144-pin
8-byte Small Outline Dual In-line Memory Module
(SO DIMM) which is organized as a 2Mx64 high
speed memory array designed for use in non-parity
applications. The SO DIMM uses 8 1Mx16 EDO
DRAMs in TSOP packages. The IBM11T1645NP is
a 4MB half populated version, made with four
1Mx16 TSOP devices. The use of EDO DRAMs
allows for a reduction in Page Mode Cycle time from
40ns (Fast Page) to 25ns for 60ns EDO modules.
This card uses serial presence detectsimplemented
via a serial EEPROM using the two pin I
2
C Protocol.
This communication protocol uses CLOCK (SCL)
and DATA I/O (SDA) lines to synchronously clock
data between the master (ex: The System Micropro-
cessor) and the slave EEPROM device. The device
address for the EEPROM is set to zero at the card.
The first 128 bytes are utilized by the SODIMM
manufacturer and the second 128 bytes are avail-
able to the end user.
All IBM 144-pin SODIMMs provide a high perfor-
mance, flexible 8-byte interface in a 2.66” long
space-saving footprint. Related products are the
2Mx64, 4Mx64 SODIMMs made with 2Mx8 and
4Mx16 EDO DRAM respectively.
-60
-6R
t
RAC
RAS Access Time
60ns
60ns
t
CAC
CAS Access Time
15ns
17ns
t
AA
Access Time From Address
30ns
30ns
t
RC
Cycle Time
104ns
104ns
t
HPC
EDO Mode Cycle Time
25ns
25ns
Card Outline
1
2
59
60
61
62
143
144
(Front)
(Back)
IBM11T1645NP 1M x 6410/10, 3.3V, EDOMMDD41DSU-001049432.
Discontinued (9/98 - last order; 3/99 last ship)
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