參數(shù)資料
型號(hào): IBM11M8735H
廠商: IBM Microeletronics
英文描述: 8M x 72 DRAM Module(8M x 72 動(dòng)態(tài)RAM模塊)
中文描述: 8米× 72內(nèi)存(8米× 72動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 21/29頁
文件大?。?/td> 516K
代理商: IBM11M8735H
IBM11M8735H
8M x 72 DRAM Module
50H8037.E22441D
Revised 4/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 21 of 29
EDO Page Mode Read Modify Write Cycle
Address
RAS
WE
OE
D
OUT
D
IN
D
IN
D
IN
t
RP
t
CP
t
CP
t
ASR
t
RAD
t
RAH
t
CAH
t
ASC
t
ASC
t
CAH
t
ASC
t
CAH
t
WP
t
CWL
t
WP
t
RCS
t
RCS
t
WP
t
CWL
t
RWL
t
CAC
t
OEH
t
OEH
t
OEH
D
OUT
D
OUT
t
CLZ
t
CLZ
t
ODD
t
ODD
t
DH
t
DH
t
CLZ
t
ODD
t
DH
D
IN
D
OUT
: “H” or “L”
Hi-Z
Hi-Z
t
RASP
t
CAS
t
HPRWC
t
CAS
t
RAL
t
AWD
t
CWD
t
AA
t
CPA
t
AA
t
AWD
t
CWD
t
RWD
t
AWD
t
CWD
t
RCS
t
RAC
t
AA
t
OEA
t
OEA
t
CAC
t
CAC
t
OEA
t
OEZ
t
OEZ
t
DS
t
DS
t
DS
Column 1
Row
Column 2
Column N
t
CSH
t
OEZ
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
t
RCD
t
CAS
t
CRP
t
CPA
CAS
t
WRP
NOTE 1
t
WRH
NOTE 1:
Implementing WE at RAS time During a Read or Write Cycle is optional.
Doing so will facilitate compatibility with future EDO DRAMs.
Discontinued (9/98 - last order; 3/99 - last ship)
相關(guān)PDF資料
PDF描述
IBM11M8845HB 8M x 72 Chipkill Correct DRAM Module(8M x 72 工業(yè)標(biāo)準(zhǔn)的168腳8位動(dòng)態(tài)RAM模塊(帶信號(hào)糾錯(cuò)系統(tǒng)))
IBM11N1645L 1M x 64 DRAM Module(1M x 64 動(dòng)態(tài)RAM模塊)
IBM11N1735Q 1M x 72 DRAM Module(1M x 72 動(dòng)態(tài)RAM模塊)
IBM11N16845BB 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
IBM11N16845CB 16M x 72 Chip-Kill Protect ECC-on-DIMM Module(16M x 72 帶糾錯(cuò)代碼保護(hù)的小外形雙列直插動(dòng)態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T