參數(shù)資料
型號: IBM11E8490BG
廠商: IBM Microeletronics
英文描述: 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動態(tài)RAM模塊(片上帶糾錯代碼功能))
中文描述: 8米× 36 ECC的問題,上海藥物研究所瓦特/錯誤線(8米× 36動態(tài)內(nèi)存模塊(片上帶糾錯代碼功能))
文件頁數(shù): 4/20頁
文件大?。?/td> 293K
代理商: IBM11E8490BG
IBM11D4490BG IBM11E4490BG
IBM11D8490BG IBM11E8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 4 of 20
75H3879
Revised 10/98
Truth Table
Function
RAS
CAS
WE
Row
Address
X
Row
Row
Column
Address
X
Col
Col
Error Line
All DQ, PQ bits
Notes
Standby
Read
Early-Write
Fast Page Mode - Read:
1st Cycle
Subsequent Cycles
Fast Page Mode - Write:
1st Cycle
Subsequent Cycles
RAS-Only Refresh
CAS-Before-RAS Refresh
Error during Read
Error during Write
H
L
L
X
L
L
X
H
L
High Impedance
Valid Data Out
Valid Data In
L
H
L
H
Row
Col
Valid Data Out
L
H
L
H
N/A
Col
Valid Data Out
L
H
L
L
Row
Col
Valid Data In
L
L
H
L
H
L
L
L
L
X
H
H
L
N/A
Row
X
X
X
Col
N/A
X
X
X
Valid Data In
High Impedance
High Impedance
Data Out
Data In
H
L
X
X
L
L
1
2
1. If all PQ’s are valid, ECC has successfully corrected single bit error, DQ contains Valid Data Out. If a PQ is invalid, ECC has
detected a multi-bit error, DQ’s for the corresponding byte contain invalid Data Out.
2. A parity error has been detected on data received from system. A subsequent read of this data will indicate a parity error (PQ
invalid). The operation of the error line during a write has not been characterized.
Presence Detect
Pin
4Mx36 (Industry Standard -70)
8Mx36 (Industry Standard -70)
Notes
PD1
V
ss
NC
1
PD2
NC
V
ss
1
PD3
V
SS
V
SS
1
PD4
NC
NC
1
1.
NC= OPEN
,
V
ss =
GND.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
CC
Power Supply Voltage
-0.3 to 6.5
V
1
V
IN
Input Voltage
-0.3 to V
CC
+ 0.3
V
1
V
OUT
Output Voltage
-0.3 to V
CC
+ 0.3
V
1
T
C
Operating Temperature (Case)
0 to +65
°
C
1
T
STG
Storage Temperature
-40 to +125
°
C
1
P
D
Power Dissipation
24
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料
PDF描述
IBM11E8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯代碼的單列動態(tài)RAM模塊)
IBM11D8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯代碼的單列動態(tài)RAM模塊)
IBM11M2640HB 2M x 64 DRAM Module(2M x 64 動態(tài)RAM模塊)
IBM11M2640H 2M x 64 DRAM Module(2M x 64 動態(tài)RAM模塊)
IBM11M2730HB 2M x 72 DRAM Module(2M x 72 動態(tài)RAM模塊)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM14H5481 制造商:AVED Memory Products 功能描述:
IBM14H5540 制造商:AVED MEMORY PRODUCTS 功能描述: 制造商:AVED Memory Products 功能描述:
IBM17R8251 制造商:AVED Memory Products 功能描述:
IBM17R8252 制造商:AVED Memory Products 功能描述:
IBM1805T 制造商:Schneider Electric 功能描述:IBM1805T