參數(shù)資料
型號: IBM11E8490BG
廠商: IBM Microeletronics
英文描述: 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動態(tài)RAM模塊(片上帶糾錯代碼功能))
中文描述: 8米× 36 ECC的問題,上海藥物研究所瓦特/錯誤線(8米× 36動態(tài)內(nèi)存模塊(片上帶糾錯代碼功能))
文件頁數(shù): 16/20頁
文件大?。?/td> 293K
代理商: IBM11E8490BG
IBM11D4490BG IBM11E4490BG
IBM11D8490BG IBM11E8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
Preliminary
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 16 of 20
75H3879
Revised 10/98
CAS Before RAS Refresh Cycle
RAS
V
IH
V
IL
V
IH
V
IL
WE
V
IH
V
IL
D
IN
V
IH
V
IL
t
RAS
t
RP
t
RPC
t
CRP
D
OUT
V
OH
V
OL
Hi-Z
t
OFF
Hi-Z
t
CDD
t
CHR
RC
t
t
CP
t
CSR
t
WRH
t
WRP
t
Note: Addresses are “H” or “L”
RPC
: “H” or “L”
CAS
Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料
PDF描述
IBM11E8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯代碼的單列動態(tài)RAM模塊)
IBM11D8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯代碼的單列動態(tài)RAM模塊)
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IBM11M2640H 2M x 64 DRAM Module(2M x 64 動態(tài)RAM模塊)
IBM11M2730HB 2M x 72 DRAM Module(2M x 72 動態(tài)RAM模塊)
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