參數(shù)資料
型號(hào): IBM11E4490BG
廠商: IBM Microeletronics
英文描述: 4M x 36 ECC-on-SIMM w/ Error Lines(4M x 36動(dòng)態(tài)RAM模塊(片上帶糾錯(cuò)代碼功能))
中文描述: 4米× 36 ECC的問(wèn)題,上海藥物研究所瓦特/錯(cuò)誤行(4米× 36動(dòng)態(tài)內(nèi)存模塊(片上帶糾錯(cuò)代碼功能))
文件頁(yè)數(shù): 5/20頁(yè)
文件大?。?/td> 293K
代理商: IBM11E4490BG
IBM11E4490BG
IBM11E8490BG
4M/8M x 36 ECC-on-SIMM w/ Error Lines
IBM11D4490BG
IBM11D8490BG
Preliminary
75H3879
Revised 10/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 5 of 20
Load Diagram
Recommended DC Operating Conditions
(T
C
= 0 to 65
°
C)
Symbol
Parameter
Min
Typ
Max
Units
Notes
V
CC
Supply Voltage
4.75
5.0
5.25
V
1
V
IH
Input High Voltage
2.4
V
CC
V
1
V
IL
Input Low Voltage
0.0
0.8
V
1
1. All voltages referenced to V
SS
.
Capacitance
(T
C
= 0 to +65
°
C, V
CC
= 5.0
±
0.25V)
Symbol
Parameter
4M x 36
Max
8M x 36
Max
Units
C
I1
Input Capacitance (A0-A10)
100
161
pF
C
I2
Input Capacitance (RAS)
70
70
pF
C
I3
Input Capacitance (CAS)
50
70
pF
C
I4
Input Capacitance (WE)
35
35
pF
C
I/O1
Output Capacitance (DQ0-DQ34)
12
12
pF
C
I/O2
Output Capacitance (PQ8, 17, 26, 35)
12
12
pF
C
I/O3
Output Capacitance (ERROR0 - ERROR3)
12
12
pF
Output
1.31 V
5.0 V
Output
RL = 436 ohms
RL1 = 1656 ohms
CL = 100 pF
CL = 100 pF
RL2 = 590 ohms
Load Circuit
Alternate Load Circuit
.
.
Discontinued (7/00 - last order; 9/00 - last ship)
相關(guān)PDF資料
PDF描述
IBM11D4490BG 4M x 36 ECC-on-SIMM w/ Error Lines(4M x 36動(dòng)態(tài)RAM模塊(片上帶糾錯(cuò)代碼功能))
IBM11D8490BG 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊((片上帶糾錯(cuò)代碼功能))
IBM11E8490BG 8M x 36 ECC-on-SIMM w/ Error Lines(8M x 36動(dòng)態(tài)RAM模塊(片上帶糾錯(cuò)代碼功能))
IBM11E8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊)
IBM11D8480BG 8M x 36 ECC-on-SIMM(single in-line memory module)(8M x 36 片上帶可兼容的糾錯(cuò)代碼的單列動(dòng)態(tài)RAM模塊)
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