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參數(shù)資料
| 型號： | IBM11E4480BG |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 36 ECC-on-SIMM（single in-line memory module）(4M x 36 片上帶可兼容的糾錯代碼的單列動態(tài)RAM模塊) |
| 中文描述： | 4米× 36 ECC的問題，上海藥物研究所（單列直插式內(nèi)存模塊）（4米× 36片上帶可兼容的糾錯代碼的單列動態(tài)內(nèi)存模塊） |
| 文件頁數(shù)： | 4/18頁 |
| 文件大?。?/td> | 241K |
| 代理商： | IBM11E4480BG |
IBM11D4480BG
IBM11E4480BG
4M x 36 ECC-on-SIMM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 4 of 18
26H2527
Revised 10/98
Truth Table
Function
RAS
CAS
WE
Row
Address
Column
Address
All DQ, PQ bits
Standby
H
X
X
X
X
High Impedance
Read
L
L
H
Row
Col
Valid Data Out
Early-Write
L
L
L
Row
Col
Valid Data In
Fast Page Mode - Read:
1st Cycle
L
H
→
L
H
Row
Col
Valid Data Out
Subsequent Cycles
L
H
→
L
H
N/A
Col
Valid Data Out
Fast Page Mode - Write:
1st Cycle
L
H
→
L
L
Row
Col
Valid Data In
Subsequent Cycles
L
H
→
L
L
N/A
Col
Valid Data In
RAS-Only Refresh
L
H
X
Row
N/A
High Impedance
CAS-Before-RAS Refresh
H
→
L
L
H
X
X
High Impedance
Presence Detect
Pin
Industry Standard -70
Notes
PD1
V
SS
1
PD2
NC
1
PD3
V
SS
1
PD4
NC
1
1.
NC= OPEN
,
V
ss =
GND.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
V
CC
Power Supply Voltage
-0.3 to 6.5
V
1
V
IN
Input Voltage
-0.3 to V
CC
+ 0.3
V
1
V
OUT
Output Voltage
-0.3 to V
CC
+ 0.3
V
1
T
C
Operating Temperature (Case)
0 to +65
°
C
1
T
STG
Storage Temperature
-40 to +125
°
C
1
P
D
Power Dissipation
12
W
1
I
OUT
Short Circuit Output Current
50
mA
1
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended peri-
ods may affect reliability.
Discontinued (7/00 - last order; 9/00 - last ship)
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