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參數(shù)資料
| 型號(hào)： | IBM0418A86LQKA-6 |
| 元件分類： | SRAM |
| 英文描述： | 512K X 18 STANDARD SRAM, 3.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 17/17頁 |
| 文件大小： | 299K |
| 代理商： | IBM0418A86LQKA-6 |
IBM0418A86LQKA
IBM0436A86LQKA
IBM0418A86SQKA
IBM0436A86SQKA
8 Mb Synchronous Communication SRAM
llwp.03
10/11/2000
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 9 of 16
DC Electrical Characteristics (T
A=0 to +70 °C, V
DD=3.3 V ± 10% or 2.5 V ± 10%)
Parameter
Symbol
Max.
Units
Notes
-6
-7
-7F
-10
Average Power Supply Current - Operating
Device Selected; VIL ≥ all inputs ≥ VIH; Cycle time ≥ tKHKH (min); VDD=max.;
Outputs open
IDD
230
210
190
140
mA
1, 2
Average Power Supply Current - Idle
Device Selected; VSS +0.2 ≥ all inputs ≥ VDD -0.2; CKE ≥ VDD -0.2; Cycle
time
≥ tKHKH (min); VDD=max
IDD1
25
mA
1, 2
CMOS Standby Current
Device De-selected; VSS +0.2 ≥ all inputs ≥ VDD - 0.2; All inputs static;
Clocks idle; VDD=max
ISB2
25
mA
2
TTL Standby Current
Device Deselected; VIL ≥ all inputs ≥ VIH; All inputs static; Clock frequency =
0; VDD=max
ISB3
25
mA
2
Clock Running Current
Device Deselected; VSS +0.2 ≥ all inputs ≥ VDD -0.2; Cycle time ≥ tKHKH
(min); VDD=max
ISB4
85
75
65
50
mA
2
Sleep Mode Current
ZZ
≥ VIH; VDD=max
ISB2Z
20
mA
1. IDD does not include IDDQ (output driver supply) current. Current increases with faster cycle times. IDDQ is afunctionof Clock Fre-
quency and output load.
2. See
Cycle Definition Truth Table on page 6 for complete definition of Selected and Deselected cycles.
TQFP Thermal Characteristics
Item
Symbol
Rating
Units
Thermal Resistance Junction to Ambient
R
ΘJA
32
°C/W
Thermal Resistance Junction to Case
R
ΘJC
4
°C/W
Capacitance (T
A=0 to +70 °C, VDD=3.3 V ± 10%, f=1 MHz)
Parameter
Symbol
Test Condition
Max
Units
Notes
Control and Address Input Capacitance
CIN
VIN =0V
4pF
Data I/O Capacitance (DQ0-DQ35)
COUT
VOUT =0V
5pF
1. Capacitance Values are sampled.
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