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| 型號： | IBM0164165B |
| 廠商： | IBM Microeletronics |
| 英文描述： | 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）) |
| 中文描述： | 4米× 16 13 / 9 EDO公司的DRAM（4米× 16動態(tài)隨機(jī)存儲器（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）） |
| 文件頁數(shù)： | 8/28頁 |
| 文件大?。?/td> | 480K |
| 代理商： | IBM0164165B |
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IBM0164165B
IBM0164165P
4M x 16 13/9 EDO DRAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 8 of 28
88H2012
GA14-4251-02
Revised 11/97
Read Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RAC
Access Time from RAS
—
50
—
60
ns
1, 2, 3, 5
t
CAC
Access Time from CAS
—
13
—
15
ns
1, 2, 5
t
AA
Access Time from Address
—
25
—
30
ns
1, 2, 5
t
OEA
Access Time From OE
—
13
—
15
ns
1, 5
t
RCS
Read Command Setup Time
0
—
0
—
ns
t
RCH
Read Command Hold Time to CAS
0
—
0
—
ns
6
t
RRH
Read Command Hold Time to RAS
0
—
0
—
ns
t
RAL
Column Address to RAS Lead Time
25
—
30
—
ns
1
t
CLZ
CAS to Output in Low-Z
0
—
0
—
ns
5
t
OEZ
Output Buffer Turn-Off Delay From OE
0
13
0
15
ns
7
t
CDD
CAS to D
IN
Delay Time
13
—
15
—
ns
4
t
OFF
Output Buffer Turn-Off Delay
0
13
0
15
ns
7
t
OES
OE Setup Time Prior to CAS
5
—
5
—
ns
t
ORD
OE Setup Time Prior to RAS (Hidden Refresh)
0
—
0
—
ns
1. In a Test Mode Read cycle, the value of t
RAC
, t
AA
, t
CAC
and t
CPA
are delayed by 5ns from the specified value. These parameters
must be adjusted in Test Mode cycles by adding 5ns to the specified value. Associated timings must also be adjusted by 5ns.
2. Operation within the t
RCD
(max.) limit ensures that t
RAC
(max.) can be met. t
RCD
(max.) is specified as a reference point only. If t
RCD
is greater than the specified t
RCD
(max.) limit, then access time is controlled by t
CAC
.
3. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference point only. If t
RAD
is
greater than the specified t
RAD
(max.) limit, then access time is controlled by t
AA
.
4. Either t
CDD
or t
OED
must be satisfied.
5. Measured with the specified current load and 100pF.
6. Either t
RCH
or t
RRH
must be satisfied for a read cycle.
7. t
OFF
(max.) and t
OEZ
(max.) define the time at which the output achieves the open circuit condition and are not referenced to output
voltage levels.
Discontinued (8/98 - last order; 12/98 last ship)
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|---|---|
| IBM0164165P | 4M x 16 13/9 EDO DRAM(4M x 16 動態(tài)RAM（超頁面模式讀寫并帶22條地址線，其中13條為行地址選通，9條為列地址選通）) |
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| IBM0164405BT3D50 | 制造商:IBM 功能描述:20L9262 |
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