參數(shù)資料
型號(hào): HYS 72V64220GU
廠商: SIEMENS AG
英文描述: 3.3 V 64M 72-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 個(gè)存儲(chǔ)體的 SDRAM 模塊)
中文描述: 3.3伏6400 72位SDRAM模塊(3.3伏6400 64/72-Bit 2個(gè)存儲(chǔ)體的內(nèi)存模塊)
文件頁(yè)數(shù): 7/17頁(yè)
文件大?。?/td> 131K
代理商: HYS 72V64220GU
HYS 64/72V64220GU
SDRAM-Modules
Data Book
7
3.00
Operating Currents per SDRAM Component
1)
T
A
= 0 to 70
o
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter
Test
Condition
Symbol -7.5
-8/-8A/-8B Unit Note
max.
Operating current
t
RC
=
t
RC(MIN.)
,
t
CK
=
t
CK(MIN.)
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
I
CC1
270
210
mA
1)
Precharge stand-by current
in Power Down Mode
CS =
V
IH(MIN.)
, CKE
V
IL(MAX.)
Precharge Stand-by Current
in Non-Power Down Mode
t
CK
= min.
I
CC2P
2
2
mA
1)
CS =
V
IH (MIN.)
, CKE
V
IH(MIN.)
No operating current
t
CK
= min.
I
CC2N
25
19
mA
1)
t
CK
= min., CS =
V
IH(MIN.)
,
active state (max. 4 banks)
CKE
V
IH(MIN.)
I
CC3N
CKE
V
IL(MAX.)
I
CC3P
50
45
mA
1)
10
10
mA
1)
Burst operating current
t
CK
= min.,
Read command cycling
I
CC4
270
210
mA
1), 2)
Auto refresh current
t
CK
= min.,
Auto Refresh command cycling
I
CC5
240
240
mA
1)
Self refresh current
Self Refresh Mode, CKE = 0.2 V
I
CC6
2.5
2.5
mA
1)
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