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參數(shù)資料
| 型號： | HYMD264G726A4-H |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | 5.250 X 1.700 X 0.150 INCH, DIMM-184 |
| 文件頁數(shù)： | 15/16頁 |
| 文件大?。?/td> | 257K |
| 代理商： | HYMD264G726A4-H |
HYMD264G726A(L)4-M/K/H/L
Rev. 0.2/May. 02
8
DC CHARACTERISTICS II (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M
-K
-H
-L
Operating Current
IDD0
One bank; Active - Precharge ; tRC=tRC(min);
tCK= tCK(min) ; DQ,DM and DQS inputs
changing twice per clock cycle ; address and
control inputs changing once per clock cycle
2540
2360
2270
mA
Operating Current
IDD1
One bank ; Active - Read - Precharge ; Burst
Length = 2 ; tRC=tRC(min); tCK= tCK(min) ;
address and control inputs changing once per
clock cycle
3350
2990
2810
mA
Precharge Power Down
Standby Current
IDD2P
All banks idle ; Power down mode ; CKE= Low,
tCK= tCK(min)
1010
mA
Idle Standby Current
IDD2F
/CS = High, All banks idle ; tCK= tCK(min) ;
CKE = High ; address and control inputs
changing once per clock cycle. VIN = VREF for
DQ, DQS and DM
1550
1370
1280
mA
Active Power Down
Standby Current
IDD3P
One bank active ; Power down mode ; CKE=
Low, tCK= tCK(min)
1100
mA
Active Standby Current
IDD3N
/CS= HIGH; CKE = HIGH; One bank; Active-
Precharge; tRC = tRAS(max); tCK = t CK
(max); DQ, DM and DQS inputs changing twice
per clock cycle; Address and other control
inputs changing once per clock cycle
1730
1550
mA
Operating Current
IDD4R
Burst = 2 ; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK= tCK (min); IOUT =
0mA
5690
4970
3890
mA
Operating Current
IDD4W
Burst = 2; Writes; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK = tCK (min); DQ, DM,
and DQS inputs changing twice per clock cycle
5690
4970
3890
Auto Refresh Current
IDD5
tRC = tRFC(min) - 8*tCK for DDR200 at
100Mhz, 10*tCK for DDR266A & DDR266B at
133Mhz; distributed refresh
4490
4130
3860
Self Refresh Current
IDD6
CKE =< 0.2V; External clock on;
tCK = tCK(min)
Normal
404
mA
Low Power
377
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
6140
5960
mA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYMD264G726A4-K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:Registered DDR SDRAM DIMM |
| HYMD264G726A4-L | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:Registered DDR SDRAM DIMM |
| HYMD264G726A4M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:64Mx72|2.5V|M/K/H/L|x18|DDR SDRAM - Low Profile Registered DIMM 512MB |
| HYMD264G726A4-M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:Registered DDR SDRAM DIMM |
| HYMD264G726A4M-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:Low Profile Registered DDR SDRAM DIMM |
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