參數(shù)資料
型號(hào): HYM72V8025GS-50-
廠(chǎng)商: SIEMENS AG
英文描述: 8M x 72-Bit EDO- DRAM Module
中文描述: 8米× 72位江戶(hù)記憶體模組
文件頁(yè)數(shù): 8/11頁(yè)
文件大小: 65K
代理商: HYM72V8025GS-50-
Semiconductor Group
8
HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
Output buffer turn-off delay from OE
t
OEZ
t
DZC
t
DZO
t
CDD
t
ODD
18
20
ns
9,17
CAS delay time from Din
0
0
ns
18
Data to OE low delay
0
0
ns
18
CAS high to data delay
15
18
ns
9,19
OE high to data delay
15
18
ns
9,19
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
13
15
ns
9
Write command pulse width
8
10
ns
Write command setup time
2
2
ns
11,20
Write command to RAS lead time
18
20
ns
9
Write command to CAS lead time
13
15
ns
Data setup time
-2
-2
ns
10,21
Data hold time
13
15
ns
9,21
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
118
66
143
77
ns
ns
9
11,21
CAS to WE delay time
29
34
ns
11,21
Column address to WE delay time
41
49
ns
11,21
OE command hold time
8
11
ns
10
Hyper Page Mode (EDO) Cycle
Fast page mode cycle time
t
PC
t
CP
t
CPA
t
COH
t
RAS
t
RHCP
t
OES
20
25
ns
CAS precharge time
8
10
ns
Access time from CAS precharge
32
37
ns
9,13
Output data hold time
3
3
ns
10
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS Delay
32
37
ns
9
OE setup time prior to CAS
5
5
ns
AC Characteristics
(cont’d) (note: 5,6,7,8)
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3 V
Parameter
Symbol
-50
-60
Unit
Note
min.
max.
min.
max.
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HYM91000L-60 x(8+1) Fast Page Mode DRAM Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM72V8025GS-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module
HYM72V8030GS-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module
HYM72V8030GS-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module
HYM72V8035GS-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module
HYM72V8035GS-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module