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參數(shù)資料
| 型號： | HYM72V8025GS-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 8M x 72-Bit EDO- DRAM Module |
| 中文描述： | 8米× 72位江戶記憶體模組 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 65K |
| 代理商： | HYM72V8025GS-50- |
Semiconductor Group
6
HYM72V8025/35GS-50/-60
8M x 72-ECC EDO-Module
Capacitance
T
A
= 0 to 70 °C;
V
CC
= 3.3 V
±
0.3 V;
f
= 1 MHz
Average
V
CC
supply current during RAS
only refresh cycles:
-50 version
-60 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
Average
V
CC
supply current during hyper
page mode (EDO):
I
CC3
–
–
1260
1080
mA
mA
2) 4)
-50 version
-60 version
(RAS =
V
IL,
CAS, address cycling
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V,
one address change within 15,6
μ
s trc)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC4
–
–
945
765
mA
mA
2) 3) 4)
I
CC5
–
30
mA
–
-50 version
-60 version
(RAS, CAS cycling
, t
RC
=
t
RC
min.)
I
CC6
–
–
1260
1080
mA
mA
2) 4)
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,B0)
C
I1
C
I2
C
I3
C
I4
C
IO1
–
10
pF
Input capacitance (RAS0, RAS2)
–
50
pF
Input capacitance (CAS0, CAS4)
–
15
pF
Input capacitance (WE0,WE2,OE0,OE2)
–
15
pF
I/O capacitance (DQ0-DQ71)
–
15
pF
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
max.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM72V8025GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
| HYM72V8030GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module |
| HYM72V8030GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit Dynamic RAM Module |
| HYM72V8035GS-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
| HYM72V8035GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 72-Bit EDO- DRAM Module |
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