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參數(shù)資料
| 型號： | HYM71V8M635HCLT6-H |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | HYM71V8M635HCLT6-H |
PC133 SDRAM SO DIMM
Rev. 0.3/Dec. 01
10
HYM71V8M635HC(L)T6 Series
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6
DC CHARACTERISTICS II
Note :
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HYM71V8M635HCT6-K/H
4.HYM71V8M635HCLT6-K/H
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
ILI
-4
4
uA
1
Output Leakage Current
ILO
-1
1
uA
2
Output High Voltage
VOH
2.4
-
V
IOH = -2mA
Output Low Voltage
VOL
-0.4
V
IOL = +2mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
-K
-H
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
480
mA
1
Precharge Standby Current
in Power Down Mode
IDD2P
CKE
≤ VIL(max), tCK = 15ns
8
mA
IDD2PS
CKE
≤ VIL(max), tCK =
∞
4
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other pins
≥ VDD-0.2V or ≤ 0.2V
60
mA
IDD2NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
60
Active Standby Current
in Power Down Mode
IDD3P
CKE
≤ VIL(max), tCK = 15ns
20
mA
IDD3PS
CKE
≤ VIL(max), tCK =
∞
20
Active Standby Current
in Non Power Down Mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
30ns. All other pins
≥ VDD-0.2V or ≤ 0.2V
120
mA
IDD3NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
80
Burst Mode Operating
Current
IDD4
tCK
≥ tCK(min), IOL=0mA
All banks active
CL=3
520
mA
1
CL=2
560
Auto Refresh Current
IDD5
tRRC
≥ tRRC(min), All banks active
880
mA
2
Self Refresh Current
IDD6
CKE
≤ 0.2V
8mA
3
3.2
mA
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM71V8M635HCLT6-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM71V8M635HCT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx64|3.3V|K/H|x4|SDR SDRAM - SO DIMM 64MB |
| HYM71V8M635HCT6-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM71V8M635HCT6-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM71V8M655ALT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx64|3.3V|P/S|x4|SDR SDRAM - SO DIMM 64MB |
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