參數(shù)資料
型號(hào): HYE25L256160AC-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: SMP(M)PIN CONT,PCB REAR MNT
中文描述: 256兆移動(dòng)RAM
文件頁(yè)數(shù): 27/55頁(yè)
文件大?。?/td> 1053K
代理商: HYE25L256160AC-75
Data Sheet
27
V1.1, 2003-04-16
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
Figure 7
Read Interrupted by a Read
Read to Write Interval
Figure 8
Read to Write Interval
SPT03713
CLK
Read A
T0
T1
T2
T3
T4
T5
T6
T7
T8
Command
DOUT A0
DOUT B0
DOUT B1 DOUT B2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
latency = 2
, DQ’s
CK2
t
CK3
latency = 3
t
, DQ’s
(Burst Length = 4, CAS latency = 2, 3)
CAS
CAS
Read B
DOUT B3
DOUT B1
DOUT A0
DOUT B0
DOUT B3
DOUT B2
Commands = 4 + 1 = 5 cycles
Minimum delay between the Read and Write
DOUT A0
DQ’s
(Burst Length = 4, CAS latency = 3)
DQMx
Command
CLK
NOP
Read A
T0
T1
NOP
NOP
T2
T3
the Write Command
Must be Hi-Z before
DIN B0
DIN B1
SPT03787
DIN B2
DQW
NOP
DQZ
t
NOP
t
T4
T5
Write B
NOP
T6
T7
NOP
T8
"H" or "L"
Write latency
of DQMx
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