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參數(shù)資料
| 型號： | HYE25L256160AC-75 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SMP(M)PIN CONT,PCB REAR MNT |
| 中文描述： | 256兆移動RAM |
| 文件頁數(shù)： | 12/55頁 |
| 文件大?。?/td> | 1053K |
| 代理商： | HYE25L256160AC-75 |
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7-0-1-2-3-4-5-6
HYE25L256160AC
256-Mbit Mobile-RAM
Functional Description
Data Sheet
12
V1.1, 2003-04-16
3.2.2
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in
Table 4
.
Burst Type
Note:
1. For a burst length of two, Ai-A1 selects the two-data-element block; A0 selects the first access within the block.
2. For a burst length of four, Ai-A2 selects the four-data-element block; A1-A0 selects the first access within the
block.
3. For a burst length of eight, Ai-A3 selects the eight-data- element block; A2-A0 selects the first access within
the block.
4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps
within the block.
3.2.3
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and
the availability of the first burst of output data. The latency can be programmed 2 and 3 clocks.
If a Read command is registered at rising clock edge n, and the latency is
m
clocks, the data is available nominally
coincident with rising clock edge
n + m
.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
Read Latency
3.2.4
The normal operating mode is selected by issuing a Mode Register Set Command with bits A12-A7 set to zero,
and bits A6-A0 set to the desired values. Burst Length for Write bursts is fixed to one by issuing a Mode Register
Set command with bits A12-A10 and A8-A7 each set to zero, bit A9 set to one, and bits A0-A6 set to the desired
values.
All other combinations of values for A12-A7 are reserved for future use and/or test modes. Test modes and
reserved states should not be used as unknown operation or incompatibility with future versions may result.
Operating Mode
Table 4
Burst
Length
Burst Definition
Starting Column Address
A2
A1
Order of Accesses Within a Burst
Type = Sequential
0-1
1-0
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Type = Interleaved
0-1
1-0
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
2
4
0
0
1
1
0
0
1
1
0
0
1
1
8
0
0
0
0
1
1
1
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE25L256160AF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L256160AC | 256-Mbit Mobile-RAM |
| HYE25L256160AC-8 | 256-Mbit Mobile-RAM |
| HYE25L256160AF | 256MBit Mobile-RAM |
| HYE25L256160AF-75 | CAP TANT 10UF 6.3V 20% SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE25L256160AC-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM |
| HYE25L256160AF | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
| HYE25L256160AF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L256160AF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256MBit Mobile-RAM |
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