參數(shù)資料
型號： HYE25L256160AC-75
廠商： INFINEON TECHNOLOGIES AG
英文描述： SMP(M)PIN CONT,PCB REAR MNT
中文描述： 256兆移動RAM
文件頁數(shù)： 23/55頁
文件大小： 1053K
代理商： HYE25L256160AC-75
Data Sheet
23
V1.1, 2003-04-16
HYE25L256160AC
256-Mbit Mobile-RAM
Electrical Characteristics
4.3
Current Specification
Table 11
Parameter
I
DD
Specification and Conditions
1)2)
1)
–25
°
C
≤
T
CASE
≤
+85
°
C; recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
Symbol
–8
–7.5
Unit Note/ Test Condition
typ. max. typ. max.
60
Operating current
Single bank access cycles
Precharge standby current
Power down mode
Precharge standby current
Non power down mode
Non operating current
Active state of 1 upto 4 banks, power down
Non operating current
Active state of 1 upto 4 banks, non power down
Burst operating current
Read command cycling
Auto refresh current
Auto refresh command cycling
Self refresh current
I
DD1
65
mA
t
RC
=
t
RC,MIN
3)
3) These parameters depend on the frequency. These values are measured at 133MHz for –7.5 and at 100MHz for –8 parts.
Input signals are changed once during
t
. If the devices are operating at a frequency less than the maximum operation
frequency, these current values are reduced.
I
DD2P
0.5
0.6
mA
CS
=
V
IH,MIN
,
CKE
≤
V
IL,MAX
3)
CS
=
V
IH,MIN
,
CKE
≥
V
IH,MIN
3)
CS
=
V
IH,MIN
,
CKE
≤
V
IL,MAX
3)
CS
=
V
IH,MIN
,
CKE
≥
V
IH,MIN
3)
3)4)
I
DD2N
18
20
mA
I
DD3P
3.5
3.5
mA
I
DD3N
20
25
mA
I
DD4
60
80
mA
4) These parameters are measured with continuous data stream during read access and all DQs toggling. CL = 3 and BL = 4
is used and the
V
DDQ
current is excluded.
I
DD5
140
155
mA
t
RC
=
t
RC,MIN
I
DD6
see
Table 12
μ
A
t
CK
=infinity,
CKE = 0.2 V
Deep power down mode current
I
DD7
5
5
μ
A
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