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參數(shù)資料
| 型號： | HYE18P32161ACL85 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No |
| 中文描述： | 32M的異步/頁的CellularRAM |
| 文件頁數(shù)： | 24/33頁 |
| 文件大小： | 641K |
| 代理商： | HYE18P32161ACL85 |
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HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
Data Sheet
24
V2.0, 2003-12-16
Figure 14
Asynchronous Write - UB, LB Controlled (OE =
V
IH
or
V
IL
, ZZ =
V
IH
)
The programming of control register in asynchronous mode is performed in the similar manner as asynchronous
write except ZZ being held low during the operation. Note that ZZ has to meet set-up time (
t
ZZWE
) and hold time
(
t
WEZZ
)of valid state (= Low) in reference to WE falling and rising edge, respectively. CS1 should toggle at the end
of the operation to get ready for following access.
Figure 15
Asynchronous Write to Control Register (OE =
V
IH
or
V
IL
)
Don't Care
A20-A0
ADDRESS
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
AS
t
WP
t
AW
t
BW
Data In Valid
DQx IN
t
DW
t
DH
High-Z
t
BLZ,
t
LZ
t
WHZ
t
BPH
Don't Care
A20-A0
RCR OPCODE
CS1
WE
UB, LB
DQx OUT
t
CW
t
WR
t
WC
t
WP
t
AW
DQx IN
t
AS
ZZ
t
ZZWE
t
CDZZ
High-Z
High-Z
t
WPH
t
WEZZ
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| HYE18P32161AC-70 | 32M Asynchronous/Page CellularRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
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| HYE25L128160AC-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES |
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