參數(shù)資料
型號: HYE18P32161AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Asynchronous/Page CellularRAM
中文描述: 32M的異步/頁的CellularRAM
文件頁數(shù): 8/33頁
文件大小: 641K
代理商: HYE18P32161AC
Data Sheet
8
V2.0, 2003-12-16
32M Asynchronous/Page CellularRAM
CellularRAM
HYE18P32161AC-70/L70
HYE18P32161AC-85/L85
1
Overview
1.1
Features
High density (1T1C-cell) Synchronous 32-Mbit Pseudo-Static RAM
Designed for cell phone applications (CellularRAM)
Functional-compatible to conventional low power asynchronous SRAM devices
Organization 2M
×
16
Refresh-free operation
1.8 V single power supply (
V
DD
and
V
DDQ
)
Support of 2.5V and 3.0V I/O voltage options (
V
DDQ
)
Low power optimized design
I
STANDBY
= 90
μ
A for L-part and 120
μ
A for standard part (32M), data retention mode
I
DPD
= < 25
μ
A (32M), non-data retention mode
Low power features (partly adopted from the JEDEC standardized low power SDRAM specifications)
– Temperature Compensated Self-Refresh (TCSR)
– Partial Array Self-Refresh (PASR)
– Deep Power Down Mode (DPD)
70 ns random access cycle time, 20 ns page mode (read only) cycle time
Byte read/write control by UB/LB
Wireless operating temperature range from -25 °C to +85 °C
P-VFBGA-48 chip-scale package (8
×
6 ball grid)
Table 1
Product Selection
HYE18P32161AC
Min. Random Cycle time (tRC)
Min. Page Read Cycle time (tPC)
Operating current (Icc1)
Stand-by current (Icc2)
Ordering Info
-70
70ns
20ns
20mA
-85
85ns
25ns
17mA
L70
70ns
20ns
20mA
L85
85ns
25ns
17mA
120uA
90uA
(Contact Factory)
H Y E 1 8 P 3 2 1 6 1 A C
32M (x16 Org)
Extended Temp. part
Chip Scale Package
Design Revision number
Device Type
1: Asynch/Page (48-ball)
V
DD
= 1.8 V typ.
PSRAM product
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