參數(shù)資料
型號: HYB3166165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 27/29頁
文件大?。?/td> 284K
代理商: HYB3166165BTL-60
Semiconductor Group
27
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hidden Refresh Early Write Cycle
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RAS
I/O
(Output)
I/O
(Input)
WE
Address
VIH
VIL
VIH
VIL
VIH
VIL
UCAS
LCAS
VIH
VIL
VIH
VIL
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“H” or “L”
t
RC
t
RAS
t
RCD
t
RSH
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RAD
t
CAH
t
WCH
t
WP
t
ASR
t
RAH
t
DS
t
DH
t
ASR
t
CRP
t
CHR
t
RP
t
RAS
t
RC
t
RP
t
ASC
Row
Row
Valid Data
HI-Z
Column
VOH
VOL
t
WRP
t
WRH
WL12
相關(guān)PDF資料
PDF描述
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
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