參數(shù)資料
型號: HYB3166165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 26/29頁
文件大?。?/td> 284K
代理商: HYB3166165BTL-60
Semiconductor Group
26
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hidden Refresh Read Cycle
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RAS
I/O
(Outputs)
I/O
(Inputs)
OE
WE
Address
UCAS
LCAS
t
RC
t
RC
t
RAS
t
RAS
t
RP
t
RP
t
CRP
t
CHR
t
RAD
t
CAH
t
ASC
t
RAH
t
ASR
t
ASR
t
RCS
t
RRH
t
AA
t
OEA
t
DZO
t
CAC
t
RAC
t
CLZ
t
OEZ
t
OFF
t
ODD
t
RCD
t
RSH
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
t
WRP
t
WRH
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AAA
AAA
AAA
AAA
AAA
AAA
AAA
“H” or “L”
Valid Data Out
Row
Column
Row
HI-Z
VOH
VOL
WL11
相關(guān)PDF資料
PDF描述
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
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