參數(shù)資料
型號: HYB3166165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 24/29頁
文件大?。?/td> 284K
代理商: HYB3166165BTL-60
Semiconductor Group
24
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
RAS Only Refresh Cycle
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t
CRP
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RAH
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RP
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RAS
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RC
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ASR
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RPC
VIH
VIL
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VOH
VOL
Row
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HI-Z
Address
RAS
UCAS
LCAS
I/O
(Outputs)
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“H” or “L”
WL9
相關PDF資料
PDF描述
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
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