參數(shù)資料
型號(hào)： HYB3165400AT-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 16M x 4-Bit Dynamic RAM
中文描述： 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
文件頁數(shù)： 7/26頁
文件大小： 246K
代理商： HYB3165400AT-60
Semiconductor Group
7
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I
I(L)
– 2
2
μ
A
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I
O(L)
– 2
2
μ
A
相關(guān)PDF資料
PDF描述
HYB3164400T-60 16M x 4-Bit Dynamic RAM
HYB3165400T-60 16M x 4-Bit Dynamic RAM
HYB3164400AJ-60 16M x 4-Bit Dynamic RAM
HYB3165400AJ-60 Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes
HYB3164400AJ-40 16M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165400J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165400T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
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