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參數(shù)資料
| 型號(hào)： | HYB3165400AT-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16M x 4-Bit Dynamic RAM |
| 中文描述： | 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32 |
| 文件頁數(shù)： | 2/26頁 |
| 文件大?。?/td> | 246K |
| 代理商： | HYB3165400AT-60 |
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Semiconductor Group
2
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
This device is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on
an advanced second generation 64Mbit 0,35
μ
m-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. This
DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400AJ/AT to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5)400ATL parts (L-versions) have a very low power sleep mode“ supported by Self
Refresh
Ordering Information
Pin Names
Type
Ordering
Code
Package
Descriptions
HYB 3164400AJ-40
P-SOJ-32-1 400 mil
DRAM (access time 40 ns)
HYB 3164400AJ-50
P-SOJ-32-1 400 mil
DRAM (access time 50 ns)
HYB 3164400AJ-60
P-SOJ-32-1 400 mil
DRAM (access time 60 ns)
HYB 3164400AT-40
P-TSOPII-32-1 400 mil
DRAM (access time 40 ns)
HYB 3164400AT-50
P-TSOPII-32-1 400 mil
DRAM (access time 50 ns)
HYB 3164400AT-60
P-TSOPII-32-1 400 mil
DRAM (access time 60 ns)
HYB 3165400AJ-40
P-SOJ-32-1 400 mil
DRAM (access time 40 ns)
HYB 3165400AJ-50
P-SOJ-32-1 400 mil
DRAM (access time 50 ns)
HYB 3165400AJ-60
P-SOJ-32-1 400 mil
DRAM (access time 60 ns)
HYB 3165400AT-40
P-TSOPII-32-1 400 mil
DRAM (access time 40 ns)
HYB 3165400AT-50
P-TSOPII-32-1 400 mil
DRAM (access time 50 ns)
HYB 3165400AT-60
P-TSOPII-32-1 400 mil
DRAM (access time 60 ns)
HYB 3164(5)400ATL
P-TSOPII-32-1 400 mil
Low Power DRAMs
A0-A12
Address Inputs for 8k-refresh versions HYB 3164400AJ/AT(L)
A0-A11
Address Inputs for 4k-refresh versions HYB 3165400AJ/AT(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O4
Data Input/Output
CAS
Column Address Strobe
WE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3164400T-60 | 16M x 4-Bit Dynamic RAM |
| HYB3165400T-60 | 16M x 4-Bit Dynamic RAM |
| HYB3164400AJ-60 | 16M x 4-Bit Dynamic RAM |
| HYB3165400AJ-60 | Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes |
| HYB3164400AJ-40 | 16M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165400J-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400J-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
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