參數(shù)資料
型號(hào): HYB3164405T-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16M x 4-Bit Dynamic RAM
中文描述: 16M X 4 EDO DRAM, 50 ns, PDSO34
文件頁(yè)數(shù): 17/32頁(yè)
文件大小: 473K
代理商: HYB3164405T-50
Semiconductor Group
105
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
Read-Write (Read-Modify-Write) Cycle
Row
Row
t
CSH
t
CAS
t
CRP
t
RWC
t
AWD
t
ASR
t
RP
t
RAS
t
RAH
t
CAH
I/O
(Outputs)
VOH
VOL
VIH
VIL
VIH
VIL
I/O
(Inputs)
OE
WE
VIH
VIL
t
ASR
Column
t
RCD
t
DH
t
RSH
t
RAD
t
CWD
t
OEH
t
RWD
t
RWL
t
WP
t
CWL
t
CLZ
t
RCS
t
AA
t
OEA
t
DS
t
DZC
t
DZO
t
ODD
t
CAC
t
OEZ
Valid
Data in
Data
Out
t
RAC
“H” or “L”
t
ASC
VIH
VIL
VIH
VIL
RAS
CAS
Address
VIH
VIL
WL4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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