參數(shù)資料
型號: HYB316400BTL-50
廠商: SIEMENS AG
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 3.3 4米× 4位動態(tài)隨機存儲器
文件頁數(shù): 24/26頁
文件大?。?/td> 253K
代理商: HYB316400BTL-50
Semiconductor Group
24
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
CAS-Before-RAS Refresh Counter Test Cycle
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ASC
t
CHR
t
CP
t
RAL
t
CAH
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RSH
t
CAS
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RP
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RAS
t
CAC
t
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t
WRH
t
OEA
t
CLZ
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DZO
t
OEZ
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OFF
t
RWL
t
CWL
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WCH
t
WCS
t
WRH
t
WRP
t
DS
t
DH
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
RAS
I/O
(Inputs)
OE
WE
Address
CAS
I/O
(Outputs)
I/O
(Outputs)
I/O
(Inputs)
WE
OE
Column
Row
Data Out
Data In
HI-Z
Read Cycle:
Write Cycle:
t
RRH
t
RCH
相關(guān)PDF資料
PDF描述
HYB3117400BJ-50 3.3V 4M x 4-Bit Dynamic RAM
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