參數(shù)資料
型號(hào): HYB316400BTL-50
廠商: SIEMENS AG
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 3.3 4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 1/26頁
文件大?。?/td> 253K
代理商: HYB316400BTL-50
Semiconductor Group 1 1.96
4 194 304 words by 4-bit organization
0 to 70 °C operating temperature
Performance:
Single + 3.3 V (± 0.3V ) supply
Low power dissipation
max. 396 active mW (HYB3117400BJ/BT-50)
max. 363 active mW (HYB3117400BJ/BT-60)
max. 330 active mW (HYB3117400BJ/BT-70)
max. 360 active mW (HYB3116400BJ/BT-50)
max. 324 active mW (HYB3116400BJ/BT-60)
max. 288 active mW (HYB3116400BJ/BT-70)
7.2 mW standby (LV-TTL)
3.6 mW standby (LV-CMOS)
720
μ
W standby for L-version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
Self Refresh and test mode
Fast page mode capability
All inputs, outputs and clocks fully TTL-compatible
2048 refresh cycles / 32 ms for HYB3117400
4096 refresh cycles / 64 ms for HYB3116400
Plastic Package:
P-SOJ-26/24-1 (300 mil)
P-TSOPII-26/24-1 (300mil)
-50
-60
-70
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
90
110
130
ns
Fast page mode cycle time
35
40
45
ns
3.3V 4M x 4-Bit Dynamic RAM
Advanced Information
HYB3116400BJ/BT(L) -50/-60/-70
HYB3117400BJ/BT(L) -50/-60/-70
相關(guān)PDF資料
PDF描述
HYB3117400BJ-50 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ-50 3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-60 3.3V 4M x 4-Bit Dynamic RAM
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HYB3164160ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM