參數(shù)資料
型號(hào): HYB316400BTL-50
廠商: SIEMENS AG
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 3.3 4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù): 14/26頁(yè)
文件大小: 253K
代理商: HYB316400BTL-50
Semiconductor Group
14
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Write Cycle (OE Controlled Write)
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Valid Data
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t
RWL
t
WP
t
OEH
t
ODD
CWL
AAAA
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t
DZO
t
OEA
t
CLZ
t
DS
t
OEZ
AAAA
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t
DH
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RC
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VIH
VIL
Row
t
DZC
AAAA
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AAAA
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“H” or “L”
Hi-Z
Hi-Z
Column
Row
t
ASC
t
RAD
t
RAL
t
CAH
t
RAH
RAS
CAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RCD
.
t
RAS
t
CSH
t
CAS
t
RP
t
CRP
t
RSH
t
ASR
t
ASR
WL3
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