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參數(shù)資料
| 型號(hào)： | HYB314171BJ-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| 中文描述： | 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 1339K |
| 代理商： | HYB314171BJ-50 |
HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
Semiconductor Group
7
AC Characteristics
5)6)
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
- 60
- 70
min.
max. min.
max. min.
max.
Common Parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
95
–
110
–
130
–
ns
RAS precharge time
35
–
40
–
50
–
ns
RAS pulse width
50
10k
60
10k
70
10k
ns
CAS pulse width
15
10k
15
10k
20
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
10
–
10
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
10
–
15
–
15
–
ns
RAS to CAS delay time
20
35
20
45
20
50
ns
RAS to column address delay
time
15
25
15
30
15
35
ns
RAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
15
–
15
–
20
–
ns
CAS hold time
50
–
60
–
70
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period
–
16
–
16
–
16
ms
Refresh period (L-version)
–
128
–
128
–
128
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
Access time from column address
t
AA
OE access time
Column address to RAS lead time
t
RAL
Read command setup time
–
15
–
15
–
20
ns
8, 9
–
25
–
30
–
35
ns
8,10
t
OEA
–
15
–
15
–
20
ns
25
–
30
–
35
–
ns
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time ref. to
RAS
0
–
0
–
0
–
ns
11
CAS to output inlow-Z
t
CLZ
0
–
0
–
0
–
ns
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314171BJ-50- | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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