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參數(shù)資料
| 型號(hào)： | HYB314171BJL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| 中文描述： | 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 1339K |
| 代理商： | HYB314171BJL-60 |
Semiconductor Group
1
The HYB 314171BJ/BJL is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The
HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 314171BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package.
This package size provides high system bit densities and is compatible with commonly used
automatic testing and insertion equipment. System oriented features include Self Refresh (L-
Version), single + 3.3 V (
±
0.3 V) power supply, direct interfacing with high performance logic
device families.
3.3V 256 K x 16-Bit Dynamic RAM
3.3V Low Power 256 K x 16-Bit
Dynamic RAM with Self Refresh
Preliminary Information
262 144 words by 16-bit organization
0 to 70
°
C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
60 ns (-60 version)
70 ns (-70 version)
CAS access time:
15ns (-50,-60 version)
20 ns (-70 version)
Cycle time:
95 ns (-50 version)
110 ns (-60 version)
130 ns (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Single + 3.3 V (
±
0.3 V) supply with a built-
in VBB generator
Low Power dissipation
max. 450 mW active (-50 version)
max. 378 mW active (-60 version)
max. 306 mW active (-70 version)
Standby power dissipation
7.2 mW standby (TTL)
3.6 mW max. standby (CMOS)
0.72 mW max. standby (CMOS) for
Low Power Version
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-
before-RAS refresh, RAS-only refresh,
hidden-refresh and fast page mode
capability
2 CAS / 1 WE control
Self Refresh (L-Version)
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms
Low Power Version only
Plastic Packages:
P-SOJ-40-1 400mil width
7.96
HYB 314171BJ-50/-60/-70
HYB 314171BJL-50/-60/-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314171BJL-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB5116160BSJ-50 | 1M x 16-Bit Dynamic RAM |
| HYB5116160BSJ-60 | 1M x 16-Bit Dynamic RAM |
| HYB5116160BSJ-70 | 1M x 16-Bit Dynamic RAM |
| HYC9068R | ARCNET Local area network driver land |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314171BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314175BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
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