參數(shù)資料
型號： HYB3118165BST-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
中文描述： 1M X 16 EDO DRAM, 60 ns, PDSO44
封裝： 0.400 INCH, PLASTIC, TSOP2-44
文件頁數(shù)： 5/24頁
文件大?。?/td> 192K
代理商： HYB3118165BST-60
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
5
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range........................................................................................ – 55 to 150
°
C
Input/output voltage (5 V versions).................................................... – 0.5 to min (
V
CC
+ 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................. – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) .............................................................................................1.0 W
Power dissipation (3.3 V versions) ..........................................................................................0.5 W
Data out current (short circuit) ................................................................................................50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
5 V Versions
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
4.5
5.5
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.4
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
3.3 V Versions
– 0.5
V
1
2.4
–
V
1
–
0.4
V
1
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
3.0
3.6
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.0
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
– 0.5
V
1
2.4
–
V
1
–
V
CC
– 0.2 –
–
0.4
V
1
V
0.2
V
相關(guān)PDF資料
PDF描述
HYB 3118165BSJ 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-50 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-60 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 5118165BSJ 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式))
HYB 5118165BST-60 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314100BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJBJL-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
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