參數(shù)資料
型號: HYB3117400BJ-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
封裝: 0.300 INCH, PLASTIC, SO-26
文件頁數(shù): 25/26頁
文件大?。?/td> 253K
代理商: HYB3117400BJ-50
Semiconductor Group
25
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Test Mode Entry
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I/O
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相關(guān)PDF資料
PDF描述
HYB3116400BJ-50 3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-60 3.3V 4M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117400BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM