- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296198 > HYB25S256160AC-7.5 (INFINEON TECHNOLOGIES AG) 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB25S256160AC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 |
| 封裝： | 12 X 8 MM, PLASTIC, TFBGA-54 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 490K |
| 代理商： | HYB25S256160AC-7.5 |
Internet Data Sheet
13
Rev. 1.40, 2005-05
03292006-M7EN-VIAQ
HYS25[L/S]256160A[F/C]–7.5
256MBit Mobile-RAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Operating Conditions
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 5
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note/
Test Condition
min.
typ.
max.
Voltage on I/O pins relative to
V
SS
V
IN, VOUT
–1.0
—
V
DD +0.5 V
—
Voltage on I/O pins relative to
V
SS
V
IN, VOUT
–1.0
—
+4.6
V
—
Voltage on
V
DD supply relative to VSS
V
DD
–1.0
—
+4.6
V
—
Voltage on
V
DDQ supply relative to VSS
V
DDQ
–1.0
—
+4.6
V
—
Operating Case Temperature (extended)
T
CASE
–25
—
+85
°C—
Storage Temperature (Plastic)
T
STG
–55
—
+150
°C—
Power Dissipation
P
D
——
0.7
W
—
Short Circuit Output Current
I
OUT
—50
—
mA
—
Table 6
Recommended Operating Conditions and DC Characteristics1)
1) 0
°C ≤ T
C ≤ 70 °C (comm.) and –25 °C ≤ TCASE ≤ +85 °C
Parameter
Symbol
Values
Unit Note/ Test Condition
min.
max.
Supply Voltage
V
DD
+2.3
+3.6
V
—
I/O Supply Voltage
V
DDQ
+1.65
+3.6
V
2)
V
DDQ < VDD + 0.3 V
Supply Voltage
V
SS
00
V
—
I/O Supply Voltage
V
SSQ
00
V
—
Input High (Logic 1) Voltage
V
IH
0.8 x
V
DDQ
V
DDQ + 0.3
V
3)4)
3) All voltages referenced to
V
SS
4)
V
IH may overshoot to VDDQ + 2.0 V for pulse width of < 4 ns.
V
IL may undershoot to – 2.0 V for pulse width < 4 ns.
Pulse width measured at 50% points with amplitude measured peak to DC reference
Input Low (Logic 0) Voltage
V
IL
–0.3
+0.3
V
Output High (Logic 1) Voltage
V
OH
V
DDQ – 0.2
—
V
IOH = –0.1 mA
Output Low (Logic 0) Voltage
V
OL
—+0.2
V
IOH = +0.1 mA
Input Leakage Current
I
IL
–5
+5
A
Any input 0 V
≤ V
IN ≤ VDD;
all other pins not under test
V
IN =0V
Output Leakage Current
I
OZ
–5
+5
A
DQ is disabled; 0 V
≤ V
OUT ≤ VDDQ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S128160TEL-37 | MEMORY SPECTRUM |
| HYB39S128160TEL-5 | MEMORY SPECTRUM |
| HYB39S128160TEL-7 | MEMORY SPECTRUM |
| HYB39S128160TEL-75 | MEMORY SPECTRUM |
| HYB39S128160TEL-7F | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。