參數(shù)資料
型號: HYB25S256160AC-7.5
廠商: INFINEON TECHNOLOGIES AG
元件分類: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54
封裝: 12 X 8 MM, PLASTIC, TFBGA-54
文件頁數(shù): 3/16頁
文件大?。?/td> 490K
代理商: HYB25S256160AC-7.5
Internet Data Sheet
11
Rev. 1.40, 2005-05
03292006-M7EN-VIAQ
HYS25[L/S]256160A[F/C]–7.5
256MBit Mobile-RAM
Functional Description
3
Functional Description
3.1
Mode Register Definition
3.1.1
Operating Mode
The normal operating mode is selected by issuing a Mode Register Set Command with bits A12-A7 set to zero,
and bits A6-A0 set to the desired values. Burst Length for Write bursts is fixed to one by issuing a Mode Register
Set command with bits A12-A10 and A8-A7 each set to zero, bit A9 set to one, and bits A0-A6 set to the desired
values.
All other combinations of values for A12-A7 are reserved for future use and/or test modes. Test modes and
reserved states should not be used as unknown operation or incompatibility with future versions may result.
MR
Mode Register Definition
(BA[1:0] = 00B)
BA1
BA0
A12
A11
A10
A9A8A7A6A5
A4A3A2A1A0
0
MODE
CL
BT
BL
reg. addr
w
Field
Bits
Type Description
BL
[2:0]
w
Burst Length
Number of sequential bits per DQ related to one read/write command;
Note: All other bit combinations are RESERVED.
000 1
001 2
010 4
011 8
111 full page (sequential burst type only)
BT
3w
Burst Type
0
Sequential
1
Interleaved
CL
[6:4]
w
CAS Latency
Number of full clocks from read command to first data valid window;
Note: All other bit combinations are RESERVED.
010 2
011 3
MODE [12:7] w
Operating Mode
Note: All other bit combinations are RESERVED.
000000
Burst Read/Burst Write
000100
Burst Read/Single Write
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