參數資料
型號: HYB25D256160TFL-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: MEMORY SPECTRUM
中文描述: 記憶譜
文件頁數: 61/94頁
文件大?。?/td> 3326K
代理商: HYB25D256160TFL-3
Data Sheet
64
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pull-down
V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the
V-I curve.
2. The full variation in driver pull-down current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V-I curve.
3. The nominal pull-up
V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the
V-I curve.
4. The full variation in driver pull-up current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the
V-I curve.
5. The full variation in the ratio of the maximum to minimum pull-up and pull-down current does not exceed 1.7,
for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pull-up to pull-down current should be unity
±10%, for device drain
to source voltages from 0.1 to 1.0 V.
Figure 34
Normal Strength Pull-down Characteristics
Figure 35
Normal Strength Pull-up Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
I OUT
(mA)
VDDQ - VOUT (V)
Maximum
Nominal High
Nominal Low
Minimum
Maximum
Nominal High
Nominal Low
Minimum
VDDQ - VOUT (V)
0.5
1
1.5
2
2.5
0
-20
-40
-60
-80
-100
-120
-140
-160
I OUT
(m
A)
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