參數(shù)資料
型號： HYB25D256160TFL-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： MEMORY SPECTRUM
中文描述： 記憶譜
文件頁數(shù)： 42/94頁
文件大?。?/td> 3326K
代理商： HYB25D256160TFL-3
Data Sheet
47
Rev. 1.6, 2004-12
HYB25D256[16/40/80]0C[E/C/F/T](L)
256 Mbit Double-Data-Rate SDRAM
Functional Description
Figure 22
Write to Read: Non-Interrupting (CAS Latency = 2; Burst Length = 4)
CL = 2
T1
T2
T3
T4
T5
T6
tWTR
NOP
Read
Write
DI a-b
NOP
DI a-b = data in for bank a, column b.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
A non-interrupted burst is shown.
tWTR is referenced from the first positive CK edge after the last data in pair.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands may be to any bank.
CK
Command
Address
DQS
DQ
DM
Don’t Care
Maximum DQSS
BAa, COL b
BAa, COL n
T1
T2
T3
T4
T5
T6
tWTR
NOP
Read
Write
NOP
CK
Command
Address
Minimum DQSS
BAa, COL b
BAa, COL n
tDQSS (max)
DI a-b
DQS
DQ
DM
tDQSS (min)
CL = 2
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